山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
1N4001W THRU 1N4007W
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
FEATURES
▪For
surface mounted applications
▪Low
profile package
▪Glass
Passivated Chip Junction
▪Ideal
for automated placement
▪Lead
free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
▪Case:
SOD-123FL
▪Terminals:
Solderable per MIL-STD-750, Method 2026
▪Approx.
Weight: 15mg / 0.00053oz
Maximum Ratings and Electrical characteristics
1
2
Top View
Marking Code： A1-A7
Simplified outline SOD-123FL and symbol
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W
Units
V
RRM
V
RMS
V
DC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
Maximum Instantaneous Forward Voltage at 1 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance
（1）
I
F(AV)
1
A
I
FSM
30
A
V
V
F
1.1
5
50
8(TYP.)
90
-55 ~ +150
T
a
= 25
°C
T
a
=125
°C
I
R
μA
C
j
R
θJA
T
j
, T
stg
pF
°C/W
°C
Typical Thermal Resistance
（2）
Operating and Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.01
SOD123FL-A-1N4001W~1N4007W-1A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
1N4001W THRU 1N4007W
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μ
A)
1.2
100
Fig.2 Typical Instaneous Reverse
Characteristics
Average Forward Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
Single phase half-wave 60 Hz
resistive or inductive load
T
J
=150
°C
10
T
J
=125
°C
1.0
T
J
=75
°C
0.1
T
J
=25
°C
0.01
0
200
400
600
1N4007W
25
50
75
100
125
150
175
800
Case Temperature (°C)
Instaneous Reverse Voltage (V)
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Junction Capacitance ( pF)
1.0
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
0.5
0
°
C
2 5
°
C
0
°
C
15
10
10
T
J
=
0.2
T
J
=
T
J
=
0.1
0.5
1
0.6
0.7
0.8
0.9
1.0
1.1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
35
30
25
20
15
10
05
00
1
8.3 ms Single Half Sine Wave
(JEDEC Method)
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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