山东晶导微电子有限公司
Jingdao Microelectronics
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 200 V
Forward Current - 5.0A
Features
• Metal silicon junction, majority carrier conduction
• For surface mounted applications
• Low power loss, high efficiency
• High forward surge current capability
• For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
• Case: SMA
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 60mg / 0.0021oz
Absolute Maximum Ratings and Electrical characteristics
SS52 THRU SS520
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
Top View
Marking Code: SS52~SS520
Simplified outline SMA and symbol
Ratings at 25
°C
ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load,
for capacitive load, derate by 20 %
Parameter
Symbols
SS52
SS54
SS56
SS58
SS510
SS512
SS515
SS520
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
40
28
40
60
42
60
80
56
80
5.0
100
70
100
120
84
120
150
105
150
200
140
200
V
V
V
A
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current,8.3ms
Single Half Sine-wave Superimposed
on Rated Load (JEDEC method)
I
FSM
150
A
Max Instantaneous Forward Voltage at 5 A
V
F
0.55
0.70
1.0
50
0.85
V
Maximum DC Reverse Current T
a
= 25°C
at Rated DC Reverse Voltage
Typical Junction Capacitance
（1）
T
a
=100°C
I
R
C
j
R
θJA
T
j
T
stg
500
mA
300
pF
°C/W
Typical Thermal Resistance
（2）
60
-55 ~ +150
-55 ~ +150
Operating Junction Temperature Range
°C
°C
Storage Temperature Range
（1）
Measured at 1 MHz and applied reverse voltage of 4 V D.C
（2）
P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.
2016.11
SMA-S-SS52~SS520-5A200V
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
SS52 THRU SS520
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
6.0
5.0
4.0
3.0
2.0
1.0
Single phase half-wave 60 Hz
resistive or inductive load
Fig.2 Typical Reverse Characteristics
10
4
T
J
=100
°C
Average Forward Current (A)
10
3
10
2
T
J
=75
°C
10
1
T
J
=25
°C
0.0
25
50
75
100
125
150
10
0
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Fig.4 Typical Junction Capacitance
20
10
T
J
=25
°C
Junction Capacitance ( pF)
1000
500
1
SS52/SS54
SS56/SS58
SS510/SS520
100
20
10
0.1
SS52/SS54
SS56~SS520
0.1
0
0.5
1.0
1.5
2.0
1
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
200
175
150
125
100
75
50
25
00
1
10
100
8.3 ms Single Half Sine Wave
(JEDEC Method)
Transient Thermal Impedance（
°C
/W）
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
Fig.6- Typical Transient Thermal Impedance
100
10
1
0.01
0.1
1
10
100
Number of Cycles at 60Hz
t, Pulse Duration（sec）
2016.11
www.sdjingdao.com
Page 2 of 3
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