山东晶导微电子有限公司
Jingdao Microelectronics
0.8A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
FEATURES:
Glass Passivated Chip Junction
Reverse Voltage - 100 to 1000 V
Forward Current - 0.8 A
High Surge Current Capability
Designed for Surface Mount Application
MECHANICAL DATA
• Case: MBS
• Terminals: Solderable per MIL-STD-750, Method 2026
• A pprox. Weight: 100mg /0.0035oz
MB1S THRU MB10S
PINNING
PIN
1
2
3
4
DESCRIPTION
Input Pin（~）
Input Pin（~）
Output
Anode（+）
Output
Cathode（-）
3
4
1
MBS Package
2
Maximum Ratings and Electrical characteristics
Ratings at 25
°C
ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Symbols
V
RRM
V
RMS
V
DC
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Units
V
V
V
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
Maximum RMS voltage
Maximum DC Blocking Voltage
Average Rectified Output Current
at T
c
= 125
°C
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage
at 0.4 A
at 0.8 A
@
T
A
=25
°C
@
T
A
=125
°C
I
O
0.8
A
I
FSM
30
1.0
1.1
5
40
13
90
32
-55 ~ +150
A
V
F
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
R
μA
Typical Junction Capacitance（Note1）
C
j
R
θJA
R
θJC
T
j
, T
stg
pF
Typical Thermal Resistance（Note2）
°C/W
Operating and Storage Temperature Range
°C
Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C.
2. Mounted on glass epoxy PC board with 4×1.5"
×
1.5"
（
3.81
×
3.81 cm
）copper
pad.
2016.01
MBS-A-MB1S~MB10S-0.8A1KV
Page 1 of 3
山东晶导微电子有限公司
Jingdao Microelectronics
MB1S THRU MB10S
Fig.1 Average Rectified Output Current
Derating Curve
Average Rectified Output Current (A)
1.2
1.0
0.8
0.6
0.4
0.2
Resistive or Inductive Load
Fig.2 Typical Reverse Characteristics
Instaneous Reverse Current（
μ
A）
100
T
J
=125
°C
10
1.0
T
J
=25
°C
0.1
00
20
40
60
80
100
120
140
0.0
25
50
75
100
125
150
175
Case Temperature (°C)
percent of Rated Peak Reverse Voltage (%)
Fig.3 Typical Instaneous Forward
Characteristics
Instaneous Forward Current (A)
Junction Capacitance ( pF)
10
T
J
=25
°C
100
Fig.4 Typical Junction Capacitance
T
J
=25
°C
1.0
10
0.1
pulse with 300μs
1% duty cycle
0.01
0.0
0.5
1.0
1.5
2.0
1
0.1
1.0
10
100
Instaneous Forward Voltage (V)
Reverse Voltage (V)
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
Peak Forward Surage Current (A)
40
30
20
10
8.3 ms Single Half Sine Wave
(JEDEC Method)
00
1
10
100
Number of Cycles
2016.01
www.sdjingdao.com
Page 2 of 3
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