Silicon
N-Channel
Power MOSFET
R
○
CS630 A8H
General Description
:
CS630
A8H,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
200
9
83
0.23
V
A
W
Ω
Features:
l
Fast Switching
l
Low ON Resistance(
Rdson≤0.28Ω
)
l
Low Gate Charge
(
Typical Data:13nC
)
l
Low Reverse transfer capacitances
(Typical:10pF)
l
100% Single Pulse avalanche energy Test
Applications
:
Automotive、DC Motor Control and Class D Amplifier.
Absolute
(Tc=
25℃ unless otherwise specified)
:
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
200
9
5.5
36
±30
460
50
3.2
5.0
83
0.67
150,–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
,T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10
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CS630 A8H
Electrical Characteristics
(Tc=
25℃ unless otherwise specified)
:
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 200V, V
GS
= 0V,
T
a
= 25℃
V
DS
=160V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
200
--
--
--
--
--
--
0.21
--
--
--
--
--
--
1
10
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=5.4A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.23
0.28
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=25V, I
D
=5.4A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
9.5
600
90
10
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=9A V
DD
=100V
V
GS
= 10V
I
D
=9A
V
DD
= 100V
V
GS
= 10V R
G
=12Ω
Test Conditions
Min.
Rating
Typ.
Max.
Units
--
--
--
--
--
--
--
10
21
24
17
13
4
4.5
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS630 A8H
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=9A,V
GS
=0V
I
S
=9A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Min.
Rating
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
120
495
9
36
1.5
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.51
62.5
Units
℃/W
℃/W
:Repetitive
rating; pulse width limited by maximum junction temperature
:L=10.0mH,
I
D
=9.6A, Start T
J
=25℃
a3
:I
SD
=9A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
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CS630 A8H
Characteristics Curve:
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2 0 1 5 V0 1
CS630 A8H
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 5 of 10
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