Silicon N-Channel
Power MOSFET
R
○
CS5N20 A4
General Description
：
CS5N20
A4,
the
silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-252, which accords with the RoHS standard..
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
200
4.8
40
0.49
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤0.65Ω)
l
Low Gate Charge
(Typical Data:7nC)
l
Low Reverse transfer capacitances
(Typical:8pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（T
J
= 25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current T
C
= 25
°C
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current T
C
= 25
°C
Gate-to-Source Voltage
Rating
200
4.8
3.4
19.2
±30
125
5
40
0.32
150，–55 to 150
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
V
GS
E
AS
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation T
C
= 25
°C
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
dv/dt
P
D
T
J
，T
stg
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 1 of 1 0
2 0 1 9 V0 1
CS5N20 A4
Electrical Characteristics
（T
J
= 25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 200V, V
GS
= 0V,
T
J
= 25℃
V
DS
=160V, V
GS
= 0V,
T
J
= 125℃
V
GS
= 30V
V
GS
=-30V
Rating
Typ.
Max.
Units
V
V/℃
µA
nA
nA
200
--
--
--
0.26
--
--
--
1
10
--
--
--
--
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=2.9A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.49
0.65
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=2.9A
Rating
Min.
Typ.
Max.
Units
S
pF
2.0
--
--
--
255
52
8
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=4.8A V
DD
=100V
V
GS
= 10V
I
D
=4.8A V
DD
= 100V
V
GS
= 10V R
G
= 10Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
7
13
27
11
7
2
3
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 9 V0 1
CS5N20 A4
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=4.8A,T
j
= 25°C
I
S
=1.8A,V
GS
=0V
R
○
Test Conditions
T
C
= 25
°C
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
A
--
--
--
--
--
--
--
--
--
105
380
7.2
4.8
19.2
1.5
--
--
--
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
3.13
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=5A, Start T
J
=25℃
a3
：I
SD
=4.8A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a4
：Recommend
soldering temperature defined by IPC/JEDEC J-STD 020
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 3 of 1 0
2 0 1 9 V0 1
CS5N20 A4
Characteristics Curve：
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 9 V0 1
CS5N20 A4
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 5 of 1 0
2 0 1 9 V0 1
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