Silicon
N-Channel
Power MOSFET
R
○
CS2N60F A9H
General Description
：
CS2N60F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard..
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
2
24
3.6
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤4.5Ω)
l
Low Gate Charge
(Typical Data:8.5nC)
l
Low Reverse transfer capacitances
(Typical:5.4pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
2.0
1.45
8.0
±30
80
6.4
1.1
5
24
0.192
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 1 of 1 0
2 0 1 5 V0 1
CS2N60F A9H
Electrical Characteristics
（Tc=
25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
V
GS
= 30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Units
V
V/
℃
µA
nA
nA
600
--
--
--
--
--
0.6
--
--
--
--
--
1
100
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=1.0A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
3.6
4.5
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=1.0A
Rating
Min.
Typ.
Max.
Units
S
pF
1.8
--
--
--
280
31
5.4
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=2.0A V
DD
=300V
V
GS
= 10V
I
D
=2.0A V
DD
= 300V
V
GS
= 10V R
G
= 9.1Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
7
5
26
10.5
8.5
1.5
4.0
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 2 of 1 0
2 0 1 5 V0 1
CS2N60F A9H
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=2.0A,V
GS
=0V
I
S
=2.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
407
1152
2
8
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
3.57
100
Units
℃
/W
℃
/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=4A, Start T
J
=25
℃
a3
：I
SD
=2A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 3 of 1 0
2 0 1 5 V0 1
CS2N60F A9H
Characteristics Curve：
10
R
○
Pd , Power Dissipation ,Watts
Id , Drain Current , Amps
100μs
24
1
1 ms
10ms
16
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
DC
8
0.01
1
0
10
100
Vds , Drain-to-Source Voltage , Volts
1000
0
25
50
75
100
Tc , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
2.5
Id , Drain Current , Amps
Figure 2 Maximum Power Dissipation vs Case Temperature
4
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
V
GS
=15V
Id , Drain Current , Amps
2.0
3
V
GS
=7V
1.5
2
V
GS
=6V
V
GS
=6.5V
1.0
0.5
1
V
GS
=4.5V
V
GS
=5.5V
0
0
25
75
100
50
TC , Case Temperature , C
125
150
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 4 of 1 0
2 0 1 5 V0 1
CS2N60F A9H
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150
−
T
C
I
=
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
，
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
6
Id , Drain Current , Amps
5
4
3
2
1
0
2
3
4
5
Vgs , Gate to Source Voltage , Volts
6
+150℃
+25℃
-55℃
8
Rds(on), Drain to Source ON
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
=2A
6
I
D
=1A
I
D
=0.5A
I
D
=0.25A
4
2
4
6
8
10
12
Vgs , Gate to Source Voltage , Volts
14
Figure 7 Typical Transfer Characteristics
8
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=1A
7
6
V
GS
=20V
5
4
0
1
2
3
Id , Drain Current , Amps
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pa ge 5 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
嵌入式系统
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