Silicon N-Channel Power MOSFET
CS16N65F A9H
General Description
：
CS16N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
The package form is
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
650
16
70
0.49
R
○
V
A
W
Ω
TO-220F, which accords with the RoHS standard..
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤0.55
Ω
)
l
Low Gate Charge
(Typical Data:54nC)
l
Low Reverse transfer capacitances
(Typical: 18.5pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
650
16
11.5
64
±30
800
90
4.2
5.0
70
0.56
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS16N65F A9H
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 650V, V
GS
= 0V,
T
a
= 25℃
V
DS
=520V, V
GS
= 0V,
T
a
= 125℃
V
GS
= 30V
V
GS
=-30V
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
nA
nA
650
--
--
--
0.65
--
--
--
10
100
--
--
--
--
100
-100
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=8A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.49
--
0.55
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
Min.
V
DS
=15V, I
D
=8A
Rating
Typ.
Max.
Units
S
pF
--
--
--
--
15
2450
218
18.5
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=16A V
DD
=325V
V
GS
= 10V
I
D
=16A V
DD
= 325V
R
G
= 25Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
30
70
145
74
54
10
21
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS16N65F A9H
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=16A,V
GS
=0V
I
S
=16A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
µ
C
--
--
--
--
--
--
--
--
410
3.5
16
64
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.79
100
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=12.6A, Start T
J
=25℃
a3
：I
SD
=16A,di/dt
≤200A/us,V
DD
≤BV
DSS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS16N65F A9H
Characteristics Curve：
100
10μs
R
○
70
Pd , Power Dissipation ,Watts
60
Id , Drain Current , Amps
10
100μs
1ms
40
1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
10ms
20
DC
0.1
1
10
100
Vds , Drain-to-Source Voltage , Volts
1000
0
0
25
50
75
100
Tc , Case Temperature , C
125
150
Figure 1 Maximum Forward Bias Safe Operating Area
20
Id , Drain Current , Amps
Figure 2 Maximum Power Dissipation vs Case Temperature
70
60
Id , Drain Current , Amps
50
40
30
20
Sixth
First: 15V
8V
7V
6.5V
6V
Sixth: 5.5V
First
PULSE TEST
Tc = 25℃
16
12
8
4
10
0
0
0
25
50
75
100
TC , Case Temperature , C
125
150
0
10
20
30
40
Vds , Drain-to-Source Voltage , Volts
50
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
Figure 4 Typical Output Characteristics
50%
0.1
10%
20%
5%
2%
P
DM
1%
t1
t2
0.01
Single pulse
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
10
Figure 5 Maximum Effective Thermal Impedance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS16N65F A9H
1000
Idm , Peak Current , Amps
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
R
○
150
−
T
C
I
=
I
25
125
100
V
GS
=10V
10
1.00E-05
1.00E-04
1.00E-02
1.00E-01
t
Pulse Width , Seconds
Figure 6 Maximum Peak Current Capability
1.00E-03
1.00E+00
1.00E+01
100
10
Rds(on), Drain to Source ON
Resistance , Ohms
Id , Drain Current , Amps
PULSED TEST
V
DS
=50V
1.65
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 16A
1.1
I
D
= 8A
I
D
= 4A
1
+150℃
+25℃
-55℃
0.55
0.1
2
4
6
8
Vgs , Gate to Source Voltage , Volts
10
0
4
6
8
10
12
Vgs , Gate to Source Voltage
，
Volts
14
Figure 7 Typical Transfer Characteristics
1.5
Rds(on), Drain to Source ON
Resistance , Ohms
PULSED TEST
Tc =25
℃
Figure 8 Typical Drain to Source ON Resistance vs
Gate Voltage and Drain Current
3
Rds(on), Drain to Source ON
Resistance, Nomalized
2.5
2
VGS=10V
ID=8A
1.2
V
GS
=10V
0.9
0.6
V
GS
=20V
1.5
1
0.3
0.5
0
-100
0
0
10
20
30
40
50
Id , Drain Current , Amps
60
70
-50
0
50
100
Tj, Junction temperature , C
150
200
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pag e 5 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
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