Silicon
N-Channel
Power MOSFET
R
○
CS7N65F A9D
General Description
：
CS7N65F A9D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
650
7
40
0.98
V
A
W
Ω
Features：
l
Fast Switching
l
ESD Improved Capability
l
Low Gate Charge
(Typical Data:28nC)
l
Low Reverse transfer capacitances
(Typical:17pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
650
7
4.5
28
±30
450
54
3.3
5.0
40
0.32
3000
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
V
ESD(G-S)
T
J
，T
stg
T
L
150，–55 to 150
300
℃
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS7N65F A9D
Electrical Characteristics
（Tc=
25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 650V, V
GS
= 0V,
T
a
= 25℃
V
DS
=520V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/
℃
µA
650
--
--
--
--
--
--
0.61
--
--
--
--
--
--
10
100
10
-10
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
µA
µA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=3.5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.98
1.4
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=3.5A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
6.0
1072
100
17
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=7.0A V
DD
=325V
V
GS
= 10V
I
D
=7.0A V
DD
= 325V
V
GS
= 10V R
G
=4.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
10
10
37
13
28
6
12
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS7N65F A9D
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=7.0A,V
GS
=0V
I
S
=7.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
267
1562
7
28
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
3.13
100
Units
℃
/W
℃
/W
Gate-source Zener diode
Symbol
V
GSO
Parameter
Gate-source breakdown voltage
Test Conditions
I
GS
=
±1mA(Open
Drain)
Rating
Min.
Typ.
Max.
Units
V
30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=9.5A, Start T
J
=25
℃
a3
：I
SD
=7A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS7N65F A9D
Characteristics Curve：
R
○
40
PD , Power Dissipation
，Watts
30
20
10
0
0
25
50
75
100
TC , Case Temperature , C
125
150
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS7N65F A9D
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 5 V0 1
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