Silicon
N-Channel
Power MOSFET
R
○
CS6N60 A3D
General Description
：
CS6N60 A3D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-251,which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
6
95
1.0
V
A
W
Ω
Features：
l
Fast Switching
l
ESD Improved Capability
l
Low Gate Charge
(Typical Data: 25nC)
l
Low Reverse transfer capacitances
(Typical: 10pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
6
3.6
24
±30
450
31
2.5
5.0
95
0.76
3000
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
V
ESD(G-S)
T
J
，T
stg
T
L
150，–55 to 150
300
℃
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2015V01
CS6N60 A3D
Electrical Characteristics
（Tc=
25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
V
GS
=+20V
V
GS
=-20V
Rating
Typ.
Max.
Unit
s
V
V/
℃
µA
µA
µA
µA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
10
-10
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=3A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
1.0
1.3
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=3A
Rating
Min.
Typ.
Max.
Units
S
pF
5
--
--
--
950
98
10
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=6A V
DD
=300V
V
GS
= 10V
I
D
=6A V
DD
= 300V
R
G
=9.1Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
11
10
36
18
25
4
10
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2015V01
CS6N60 A3D
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=6.0A,V
GS
=0V
I
S
=6.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
201
989
6
24
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.32
62.5
Units
℃
/W
℃
/W
Gate-source Zener diode
Symbol
V
GSO
Parameter
Gate-source breakdown voltage
Test Conditions
I
GS
=
±1mA(Open
Drain)
Rating
Min.
Typ.
Max.
Units
V
30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=9.5A, Start T
J
=25
℃
a3
：I
SD
=6A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS6N60 A3D
Characteristics Curve：
100
R
○
120
Id , Drain Current , Amps
Pd , Power Dissipation ,Watts
10
1ms
90
1
10ms
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
100ms
DC
60
0 .1
30
0 .0 1
1
0
10
100
V d s , D r a in - to - S o u r c e V o lta g e , V o lts
1000
0
25
50
75
100
125
150
Tc , Case Temperature , C
Figure 1 Maximum Forward Bias Safe Operating Area
6
Id , Drain Current , Amps
5
Id , Drain Current , Amps
Figure 2 Maximum Power Dissipation vs Case Temperature
6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
V
GS
=15V
4.5
V
GS
=7V
4
3
2
1
0
0
25
75
100
125
50
TC , Case Temperature , C
150
3
V
GS
=6.5V
V
GS
=6V
1.5
V
GS
=4.5V
V
GS
=5.5V
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2015V01
CS6N60 A3D
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150
−
T
C
I
=
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
，
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
9
Id , Drain Current , Amps
7.5
6
4.5
3
1.5
0
2
3
4
5
Vgs , Gate to Source Voltage , Volts
6
-55℃
+25℃
+150℃
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
3.6
Rds(on), Drain to Source ON
Resistance , Ohms
3.0
2.4
1.8
1.2
0.6
0
4
6
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 6A
I
D
= 3A
I
D
= 1.5A
8
10
12
Vgs , Gate to Source Voltage
，
Volts
14
Figure 7 Typical Transfer Characteristics
2.5
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=.2.5A
2.0
1.5
V
GS
=20V
1.0
0.5
0
10
15
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
5
20
-50
0
50
100
Tj, Junction temperature , C
150
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pag e 5 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
嵌入式系统
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