Silicon
N-Channel
Power MOSFET
R
○
CS10N80F A9D
General Description
：
CS10N80F A9D, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
800
10
60
0.72
V
A
W
Ω
Features：
l
Fast Switching
l
ESD Improved Capability
l
Low Gate Charge
(Typical Data: 65nC)
l
Low Reverse transfer capacitances
(Typical: 25pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of PC POWER.
Absolute
（Tc=
25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Rating
800
10
6.5
40
±30
997
40
2.8
5.0
60
0.48
6000
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
V
GS
E
AS
E
AR
I
AR
a1
a1
a2
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
V
ESD(G-S)
T
J
，T
stg
T
L
150，–55 to 150
300
℃
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS10N80F A9D
Electrical Characteristics
（Tc=
25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
R
○
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=900V, V
GS
= 0V,
T
a
= 25℃
V
DS
=720V, V
GS
= 0V,
T
a
= 25℃
V
GS
=+20V
V
GS
=-20V
Rating
Typ.
Max.
Uni
ts
V
V/
℃
µA
µA
µA
µA
800
--
--
--
--
--
--
0.5
--
--
--
--
--
--
25
250
10
-10
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.72
0.9
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=10A
Rating
Min.
Typ.
Max.
Units
S
pF
20
--
--
--
2900
200
25
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=10A V
DD
=640V
V
GS
= 10V
I
D
=10A V
DD
=400V
V
GS
= 10V
R
G
=4.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
19
10
68
23
65
13
25
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS10N80F A9D
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=10A,V
GS
=0V
I
S
=10A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
µC
--
--
--
--
--
--
--
--
200
2.2
10
40
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
2.08
100
Units
℃
/W
℃
/W
Gate-source Zener diode
Symbol
V
GSO
Parameter
Gate-source breakdown voltage
Test Conditions
I
GS
=
±1mA(Open
Drain)
Rating
Min.
Typ.
Max.
Units
V
30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：I
SD
=9A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS10N80F A9D
Characteristics Curve：
R
○
80
PD , Power Dissipation
，Watts
60
40
20
0
0
25
50
75
100
125
150
TC , Case Temperature , C
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS10N80F A9D
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 5 of 1 0
2 0 1 5 V0 1
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