Silicon
N-Channel
Power MOSFET
R
○
CS8N65F A9H
General Description
：
CS8N65F
A9H,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220F, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
650
8
45
0.9
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤1.3Ω)
l
Low Gate Charge
(Typical Data:28nC)
l
Low Reverse transfer capacitances
(Typical:14pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25
℃
unless otherwise specified
）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
650
8
5.5
32
±30
500
40
2.8
5.0
45
0.36
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
T
J
，T
stg
T
L
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS8N65F A9H
Electrical Characteristics
（Tc=
25
℃
unless otherwise specified
）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 650V, V
GS
= 0V,
T
a
= 25℃
V
DS
=520V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/
℃
µA
650
--
--
--
--
--
--
0.5
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=4.0A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.9
1.3
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=4A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
7
1240
108
14
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=8.0A V
DD
=325V
V
GS
= 10V
I
D
=8.0A V
DD
= 325V
V
GS
= 10V R
G
= 9.1Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
13
15
40
21
28
6
11
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS8N65F A9H
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=8.0A,V
GS
=0V
I
S
=8.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
uC
--
--
--
--
--
--
--
--
556
3.4
8
32
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
2.78
100
Units
℃
/W
℃
/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=10A, Start T
J
=25
℃
a3
：I
SD
=8A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS8N65F A9H
Characteristics Curve：
100
R
○
70
Pd , Power Dissipation ,Watts
10000
60
50
40
30
20
10
0
0
Id , Drain Current , Amps
10
100μs
1
1ms
10ms
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
DC
0.01
1
10
100
1000
Vds , Drain-to-Source Voltage , Volts
Figure 1 Maximum Forward Bias Safe Operating Area
10
Id , Drain Current ,Amps
50
75
100
125
150
Tc , Case Temperature , C
Figure 2 Maximum Power Dissipation vs Case Temperature
25
14
V
GS
=10V
Id , Drain Current , Amps
8
6
4
2
0
12
10
8
6
4
2
0
V
GS
=6V
V
GS
=8V
V
GS
=7V
V
GS
=9V
50
75
100
125
150
Tc , Case Temperature ,C
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
0
25
0
5
10
15
20
25
30
Vds , Drain-to-Source Voltage , Volts
35
Figure 4 Typical Output Characteristics
20%
10%
0.1
5%
P
DM
2%
1%
t1
t2
Single pulse
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.01
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS8N65F A9H
100
Idm , Peak Current , Amps
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
R
○
10
150
−
T
C
I
=
I
25
125
V
GS
=10V
1
1.00E-05
1.00E-04
1.00E-03
t
1.00E-02
1.00E-01
Pulse Width , Seconds
4
Rds(on), Drain to Source ON
Resistance , Ohms
1.00E+00
1.00E+01
Figure 6 Maximum Peak Current Capability
14
Id , Drain Current ,Amps
12
10
8
6
4
2
0
0
2
4
6
8
10
Vgs , Gate to Source Voltage
，
Volts
12
PULSED TEST
V
DS
=30V
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
3
I
D
= 8A
I
D
= 4A
2
I
D
= 2A
1
0
4
6
8
10
12
Vgs , Gate to Source Voltage
，
Volts
14
Figure 7 Typical Transfer Characteristics
1.2
Rds(on), Drain to Source ON
Resistance , Ohms
PULSED TEST
Tc =25
℃
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
Rds(on), Drain to Source ON
Resistance, Nomalized
2.5
2
1.5
1
0.5
0
-100
PULSED TEST
VGS=10V ID=2.5A
1.1
1
V
GS
=10V
0.9
0.8
0.7
0
1
2
3
4
Id , Drain Current , Amps
5
6
-50
0
50
100
Tj, Junction temperature ,C
150
200
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pag e 5 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
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