Silicon
N-Channel
Power MOSFET
R
○
CS12N65F A9H
General Description
：
CS12N65F A9H, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form
is TO-220F, which accords with the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
650
12
55
0.54
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤0.7Ω)
l
Low Gate Charge
(Typical Data:44nC)
l
Low Reverse transfer capacitances
(Typical:16pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
650
12
10
48
±30
700
100
4.5
5.0
55
0.44
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
V
GS
E
AS
E
AR
I
AR
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 1 5 V0 1
CS12N65F A9H
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 650V, V
GS
= 0V,
T
a
= 25℃
V
DS
=520V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
650
--
--
--
--
--
--
0.74
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=6A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
0.54
0.7
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=6.0A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
12
2060
184
16
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=12.0A V
DD
=325V
V
GS
= 10V
I
D
=12.0A V
DD
= 325V
V
GS
= 10V R
G
= 4.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
15
18
44
22
44
6.5
18
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 2 of 1 0
2 0 1 5 V0 1
CS12N65F A9H
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=12.0A,V
GS
=0V
I
S
=12.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
345
2680
12
48
1.5
--
--
Pulse width tp≤300µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
2.27
100
Units
℃/W
℃/W
a1
a2
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=11.8A, Start T
J
=25℃
a3
：I
SD
=12A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 3 of 1 0
2 0 1 5 V0 1
CS12N65F A9H
Characteristics Curve：
100
10μs
R
○
75
Id , Drain Current , Amps
10
100μs
1ms
Pd , Power Dissipation ,Watts
60
45
1
10ms
DC
30
0.1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
15
0.01
1
10
100
1000
Vds , Drain-to-Source Voltage , Volts
10000
0
0
25
50
75
100
125
T c , C ase T em perature , C
150
Figure 1 Maximum Forward Bias Safe Operating Area
18
15
Figure 2 Maximum Power Dissipation vs Case Temperature
21
18
Id , Drain Current , Amps
15
12
9
6
3
0
V
GS
=5V
V
GS
=7V
V
GS
=6V
V
GS
=9V
Id , Drain Current ,Amps
12
9
6
3
0
0
25
50
75
100
Tc , Case Temperature ,C
125
150
V
GS
=8V
0
5
10
15
25
30
20
Vds , Drain-to-Source Voltage , Volts
35
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
Figure 4 Typical Output Characteristics
20%
10%
0.1
5%
P
DM
2%
1%
t1
t2
Single pulse
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.01
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 4 of 1 0
2 0 1 5 V0 1
CS12N65F A9H
100
Idm , Peak Current , Amps
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
R
○
10
150
−
T
C
I
=
I
25
125
V
GS
=10V
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t
Pulse Width , Seconds
Figure 6 Maximum Peak Current Capability
3
Rds(on), Drain to Source ON
Resistance , Ohms
1.00E+00
1.00E+01
14
Id , Drain Current ,Amps
12
10
8
6
4
2
0
0
2
4
6
8
10
Vgs , Gate to Source Voltage
，
Volts
12
PULSED TEST
V
DS
=30V
2.5
I
D
= 12A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
2
1.5
1
0.5
0
I
D
= 6A
I
D
= 3A
Figure 7 Typical Transfer Characteristics
1.1
Rds(on), Drain to Source ON
Resistance , Ohms
PULSED TEST
Tc =25
℃
8
10
12
14
Vgs , Gate to Source Voltage
，
Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
3
Rds(on), Drain to Source ON
Resistance, Nomalized
2.5
2
1.5
1
0.5
0
-100
PULSED TEST
VGS=10V ID=6A
4
6
1.0
V
GS
=10V
0.9
0.8
0.7
0.6
0
2
4
6
8
Id , Drain Current , Amps
10
12
-50
0
50
100
Tj, Junction temperature ,C
150
200
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Pag e 5 of 1 0
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2 0 1 5 V0 1
嵌入式系统
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