Silicon N-Channel
Power MOSFET
R
○
CS3N80 A3
General Description
：
CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and
higher efficiency. The package form is TO-251, which accords with
the RoHS standard.
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
800
3
75
4.0
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance(
Rdson≤4.8Ω
)
l
Low Gate Charge
(
Typical Data:18nC
)
l
Low Reverse transfer capacitances
(Typical:7pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Automotive、DC Motor Control and Class D Amplifier.
：
Absolute
（Tc=
25℃ unless otherwise specified）
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
I
AR
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
800
3
1.9
12
±30
120
12
1.5
5.0
75
0.6
150，–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 1 of 1 0
2015V01
CS3N80 A3
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 800V, V
GS
= 0V,
T
a
= 25℃
V
DS
=640V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
µA
800
--
--
--
--
--
--
0.61
--
--
--
--
--
--
25
250
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=1.5A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
Ω
V
--
2.0
4.0
4.8
4.0
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=1.5A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
5.5
660
50
7
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=3A V
DD
=400V
V
GS
= 10V
I
D
=3A
V
DD
= 400V
V
GS
= 10V R
G
=12Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
16
15
40
20
18
5
8
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 2 of 1 0
2015V01
CS3N80 A3
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=3A,V
GS
=0V
I
S
=3A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
µ
C
--
--
--
--
--
--
--
--
820
6.05
3
12
1.5
Pulse width tp≤380µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.67
62
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=4.9A, Start T
J
=25℃
a3
：I
SD
=3A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 3 of 1 0
2015V01
CS3N80 A3
R
○
Characteristics Curve：
80
PD , Power Dissipation
，Watts
70
60
50
40
30
20
10
0
0
25
50
75
100
TC , Case Temperature , C
125
150
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 4 of 1 0
2015V01
CS3N80 A3
R
○
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pa ge 5 of 1 0
2015V01
嵌入式系统
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