Huajing Discrete Devices
Silicon
N-Channel
Power MOSFET
R
○
CS150N03A8
General Description
：
CS150N03A8,
the silicon
V
DSS
N-channel Enhanced
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
30
150
100
2.8
V
A
W
mΩ
VDMOSFETs, is obtained by advanced trench Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤0.50Ω)
l
Low Gate Charge
(Typical Data:29nC)
l
Low Reverse transfer capacitances
(Typical:12pF)
l
100% Single Pulse avalanche energy Test
Applications
：
UPS,Inverter,Lighting.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
30
150
120
600
±20
1300
4.0
100
0.67
–55
to 175
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
T
J
，T
stg
T
L
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Pag e 1 of 1 0
2 0 11
Huajing Discrete Devices
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
vdss Temperature Coefficient
R
○
CS150N03A8
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 30V, V
GS
= 0V,
T
a
= 25℃
V
DS
=24V, V
GS
= 0V,
T
a
= 125℃
Rating
Typ.
Max.
Units
V
V/℃
µA
30
--
--
--
--
--
--
0.08
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
Min.
V
GS
=10V,I
D
=50A
V
GS
=4.5V,I
D
=40A
V
DS
= V
GS
, I
D
= 250µA
Rating
Typ.
Max.
Units
3.5
6.5
3.0
mΩ
mΩ
V
--
--
1.0
2.8
5.0
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
Min.
V
DS
=10V, I
D
=15A
Rating
Typ.
Max.
Units
--
--
--
--
pF
S
--
--
--
--
100
10000
940
800
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=16A V
DD
=15V
V
GS
= 10V
I
D
=1A V
DD
= 15V
V
GS
= 10V R
G
= 6Ω
Test Conditions
Min.
Rating
Typ.
Max.
Units
--
--
--
--
--
--
nC
ns
--
--
--
--
--
--
--
22
20
145
74
75
22
28
W U XI C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 2 o f 1 0
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Huajing Discrete Devices
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=150A,V
GS
=0V
I
S
=20,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
CS150N03A8
Test Conditions
Min.
Rating
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
52
53
150
600
1.5
Pulse width tp≤380µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.5
62
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=1.0mH,
I
D
=53.5A, Start T
J
=25℃
a3
：I
SD
=20A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 3 o f 1 0
2 0 11
Huajing Discrete Devices
Characteristics Curve：
R
○
CS150N03A8
Figure 1 Maximun Forward Bias Safe Operating Area
Figure 2 Maximun Power Dissipation vs Case Temperature
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Figure 4 Typical Output Characteristics
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 4 o f 1 0
2 0 11
Huajing Discrete Devices
R
○
CS150N03A8
Figure 6 Maximun Peak Current Capability
Figure 7 Typical Transfer Characteristics
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 5 o f 1 0
2 0 11
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