Silicon N-Channel Power MOSFET
CS3205 B8
General Description
：
CS3205 B8, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar
Technology which reduce the conduction loss, improve
switching performance and enhance the avalanche
energy. The transistor can be used in various power
switching circuit for system miniaturization and higher
efficiency. The package form is TO-220AB, which
accords with the RoHS standard.
V
DSS
I
D
（
Silicon limited current
）
P
D
(T
C
=25℃)
R
DS(ON)Typ
R
○
55
120
230
7.6
V
A
W
mΩ
Features：
Fast Switching
Low ON Resistance(Rdson≤8.5mΩ)
Low Gate Charge
(Typical Data:74nC)
Low Reverse transfer capacitances(Typical:68pF)
100% Single Pulse avalanche energy Test
Applications
：
Automotive、DC Motor Control and Class D Amplifier.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100 °
C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
55
120
84
390
±
20
1200
5.0
230
1.53
150，–55 to 150
300
Units
V
A
A
A
V
mJ
V/ns
W
W/℃
℃
℃
V
GS
E
AS
a2
a3
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
dv/dt
P
D
Derating Factor above 25°
C
Operating Junction and Storage Temperature Range
Maximum Temperature for Soldering
T
J
，T
stg
T
L
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CS3205 B8
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
Test Conditions
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 55V, V
GS
= 0V,
T
a
= 25℃
V
DS
=44V, V
GS
= 0V,
T
a
= 125℃
Rating
Min.
Typ.
Max.
Units
V
V/℃
55
--
--
--
--
--
--
0.08
--
--
--
--
--
--
1
Drain to Source Leakage Current
µA
10
100
-100
nA
nA
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+20V
V
GS
=-20V
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
V
GS
=10V,I
D
=62A
V
DS
= V
GS
, I
D
= 250µA
Rating
Min.
Typ.
Max.
Units
mΩ
V
--
2.0
7.6
8.5
4.0
Pulse width tp≤300µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Trans conductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
V
DS
=15V, I
D
=75A
Rating
Min.
Typ.
Max.
Units
S
pF
--
--
--
--
85
4395
903
68
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=75A V
DD
=30V
V
GS
= 10V
I
D
=75A V
DD
= 30V
V
GS
= 10V R
G
= 4.7Ω
Test Conditions
Rating
Min.
Typ.
Max.
Units
--
--
--
--
--
--
--
16
51
75
30
74
17
21
--
--
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3205 B8
R
○
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
I
RRM
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
I
S
=75A,T
j
= 25°
C
I
S
=75A,V
GS
=0V
Test Conditions
Rating
Min.
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
--
135
412
6.1
120
390
1.5
Reverse Recovery Charge
Reverse Recovery Current
dI
F
/dt=100A/us,
V
GS
=0V
--
A
Pulse width tp≤300µs,δ≤2%
Symbol
R
θJC
R
θJA
a1
a2
Parameter
Junction-to-Case
Junction-to-Ambient
Max.
0.65
62.5
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=15.5A, Start T
J
=25℃
a3
：I
SD
=75A,di/dt ≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
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CS3205 B8
Characteristics Curve：
1000
Pd , Power Dissipation ,Watts
10μs
R
○
280
240
200
160
120
80
40
0
1
10
Vds , Drain-to-Source Voltage , Volts
100
Id , Drain Current , Amps
100
100μs
1ms
10
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
10ms
DC
1
0
25
50
75
100
125
Tc , Case Temperature , C
150
Figure 1 Maximum Forward Bias Safe Operating Area
150
Figure 2 Maximum Power Dissipation vs Case Temperature
160
140
V
GS
=15V
V
GS
=10V
120
Id , Drain Current , Amps
Id , Drain Current , Amps
120
100
80
60
40
20
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
90
V
GS
=6V
V
GS
=6.5V
V
GS
=5.5V
60
30
0
25
50
75
100
TC , Case Temperature
，
C
125
150
0
0
1
2
3
4
5
6
7
Vds , Drain-to-Source Voltage , Volts
8
Figure 3 Maximum Continuous Drain Current vs Case Temperature
Thermal Impedance, Normalized
Figure 4 Typical Output Characteristics
1
50%
20%
0.1
10%
5%
2%
Single pulse
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
P
DM
0.01
t1
t2
0.001
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
1.00E+00
1.00E+01
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
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CS3205 B8
1000
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150
T
C
I
½
I
25
125
100
V
GS
=10V
10
1.00E-05
1.00E-04
120
100
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
1.00E-02
1.00E-01
t
Pulse Width , Seconds
Figure 6 Maximum Peak Current Capability
0.011
Rds(on), Drain to Souce ON
1.00E-03
1.00E+00
1.00E+01
0.010
I
D
=120A
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
=60A
I
D
=30A
Id , Drain Current，Amps
80
60
40
20
0
0
2
4
6
8
Vgs , Gate to Source Voltage,Volts
Figure 7 Typical Transfer Characteristics
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
+150℃
+25℃
-55℃
0.009
0.008
0.007
0.006
0.005
I
D
=15A
10
8
10
12
14
Vgs , Gate to Source Voltage ,Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.75
2.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=60A
4
6
0.011
Rds(on), Drain to Souce ON
Resistance . Ohms
Rds(on), Drain to Source ON
Resistance, Nomalized
0.010
2.25
2
1.75
1.5
1.25
1
0.75
0.5
0.009
0.008
V
GS
=10V
V
GS
=20V
0.007
0.006
0
75
100 125 150 175 200
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
25
50
0.25
-75 -50 -25 0
25 50 75 100 125 150 175
Tj, Junction temperature , C
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Page 5 of 10
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