Huajing Discrete Devices
Silicon
General Description
：
CS1N60
A4H,
the
silicon
N-channel
Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-252,
which accords with the RoHS standard.
R
○
N-Channel
Power MOSFET
CS1N60 A4H
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
0.8
25
11
V
A
W
Ω
Features：
l
Fast Switching
l
Low ON Resistance
(Rdson≤15Ω)
l
Low Gate Charge
(Typical Data:4nC)
l
Low Reverse transfer capacitances
(Typical:2.6pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
I
AR
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
0.8
0.6
3.2
±30
20
6
1.1
5
25
0.2
150，–55 to 150
300
Page 1 of 10
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
℃
℃
2012
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
T
J
，T
stg
T
L
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Huajing Discrete Devices
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
R
○
CS1N60 A4H
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
= 600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
Rating
Typ.
Max.
Units
V
V/℃
µA
600
--
--
--
--
--
--
0.55
--
--
--
--
--
--
1
100
100
-100
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
V
GS
=+30V
V
GS
=-30V
nA
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
Min.
V
GS
=10V,I
D
=0.4A
V
DS
= V
GS
, I
D
= 250µA
Rating
Typ.
Max.
Units
Ω
V
--
2.0
11
15
4.0
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
Min.
V
DS
=15V, I
D
=0.8A
Rating
Typ.
Max.
Units
S
pF
--
--
--
--
0.9
92
10.7
2.6
--
--
--
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=0.8A V
DD
=300V
V
GS
= 10V
I
D
=0.8A V
DD
= 300V
V
GS
= 10V R
G
= 25Ω
Test Conditions
Min.
Rating
Typ.
Max.
Units
--
--
--
--
--
--
--
6.3
6.3
21
15
4
0.7
2.1
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 2 o f 1 0
2012
Huajing Discrete Devices
R
○
CS1N60 A4H
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=0.8A,V
GS
=0V
I
S
=0.8A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
Test Conditions
Min.
Rating
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
400
739
0.8
3.2
1.5
Pulse width tp≤380µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
a1
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
5.0
62
Units
℃/W
℃/W
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10.0mH,
I
D
=2A, Start T
J
=25℃
a3
：I
SD
=0.8A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a2
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 3 o f 1 0
2012
Huajing Discrete Devices
Characteristics Curve：
10
R
○
CS1N60 A4H
Pd , Power Dissipation ,Watts
30
Id,Drian current,Amps
1
10μs
10ms
20
0 .1
100ms
0 .0 1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=150℃
T
C
=25℃
Single Pulse
10
DC
0 .0 0 1
1
10
100
0
1000
0
25
V d s,D ra in -to -s o u rc e V o lta g e ,V o lts
50
75
100
Tc , Case Temperature , C
125
150
Figure 1 Maximun Forward Bias Safe Operating Area
1
Figure 2 Maximun Power Dissipation vs Case Temperature
1.6
1.4
V
GS
=10V
Id , Drain Current , Amps
0.75
Id,Drain Source,Volts
1.2
1
V
GS
=9V
V
GS
=8V
0.5
0.8
0.6
0.4
0.2
V
GS
=5V
V
GS
=6V
0.25
0
25
50
75
100
Tc,Case Temperature,C
125
150
0
0
5
10
15
20
Vds,Drain Source Voltage,Volts
25
30
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
50%
Figure 4 Typical Output Characteristics
Thermal Impedance,Normanlized
20%
0.1
10%
5%
0.01
2%
P
DM
0.001
1%
t1
t2
0.0001
Single pulse
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.00001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Rectangular Pulse Duration,Seconds
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 4 o f 1 0
2012
Huajing Discrete Devices
10
Idm , Peak Current , Amps
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
CS1N60 A4H
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
1
150
−
T
C
I
=
I
25
125
V
GS
=10V
0.1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01
t
Pulse W idth , Seconds
Figure 6 Maximun Peak Current Capability
17
Rds(on), Drain to Source ON
Resistance , Ohms
16
15
14
13
12
11
1.00E+00
1.00E+01
1.5
Id Drain to Source Current,Amps
1.2
V
DS
=25V
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 0.8A
I
D
= 0.4A
I
D
= 0.2A
0.9
0.6
0.3
0
0
2
4
6
8
Vgs,Gate to Source Voltage,Volts
10
Figure 7 Typical Transfer Characteristics
14
Rds(on),Drain to source ON
Resistance. Ohms
6
8
10
12
14
Vgs , Gate to Source Voltage
，
Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
2.5
Rds(on),Drain to Source ON
Resistance,Normalized
2
4
13
V
GS
=10V
V
GS
=10V
I
D
=250μA
12
1.5
11
1
10
0.5
9
0
0.3
0.9
0.6
Id,Drain Current,Amps
1.2
1.5
0
-100
-50
0
50
100
Tj,Junction Temperature,C
150
200
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
2012
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 5 o f 1 0
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