Huajing Discrete Devices
Silicon
General Description
：
CS4N60 A3HD, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is TO-251,
which accords with the RoHS standard.
R
○
N-Channel
Power MOSFET
CS4N60 A3HD
V
DSS
I
D
P
D
(T
C
=25℃)
R
DS(ON)Typ
600
4
75
1.8
V
A
W
Ω
Features：
l
Fast Switching
l
ESD Improved Capability
l
Low Gate Charge
(Typical Data: 14.5nC)
l
Low Reverse transfer capacitances
(Typical: 8.5pF)
l
100% Single Pulse avalanche energy Test
Applications
：
Power switch circuit of adaptor and charger.
Absolute
（Tc=
25℃ unless otherwise specified）
：
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
I
AR
a1
Parameter
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current T
C
= 100
°C
Pulsed Drain Current
Gate-to-Source Voltage
Rating
600
4
3.2
16
±30
200
30
2.5
5.0
75
0.60
3000
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/℃
V
a2
a1
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
a1
a3
dv/dt
P
D
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
V
ESD(G-S)
T
J
，T
stg
T
L
150，–55 to 150
300
℃
℃
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 1 of 10
2012
Huajing Discrete Devices
R
○
CS4N60 A3HD
Electrical Characteristics
（Tc=
25℃ unless otherwise specified）
：
OFF Characteristics
Symbol
V
DSS
ΔBV
DSS
/ΔT
J
I
DSS
I
GSS(F)
I
GSS(R)
Parameter
Drain to Source Breakdown Voltage
Bvdss Temperature Coefficient
Drain to Source Leakage Current
Gate to Source Forward Leakage
Gate to Source Reverse Leakage
Test Conditions
Min.
V
GS
=0V, I
D
=250µA
ID=250uA,Reference25℃
V
DS
=600V, V
GS
= 0V,
T
a
= 25℃
V
DS
=480V, V
GS
= 0V,
T
a
= 125℃
V
GS
=+20V
V
GS
=-20V
Rating
Typ.
Max.
Unit
s
V
V/℃
µA
µA
µA
µA
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
1
100
10
-10
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
Parameter
Drain-to-Source On-Resistance
Gate Threshold Voltage
Test Conditions
Min.
V
GS
=10V,I
D
=2A
V
DS
= V
GS
, I
D
= 250µA
Rating
Typ.
Max.
Units
Ω
V
--
2.0
1.8
2.3
4.0
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Symbol
g
fs
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0V V
DS
= 25V
f = 1.0MHz
Test Conditions
Min.
V
DS
=15V, I
D
=2A
Rating
Typ.
Max.
Units
S
pF
3.5
--
--
--
544
55
8.5
--
Resistive Switching Characteristics
Symbol
t
d(ON)
tr
t
d(OFF)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain (“Miller”)Charge
I
D
=4A V
DD
=300V
V
GS
= 10V
I
D
=4A V
DD
= 300V
R
G
=4.7Ω
Test Conditions
Min.
Rating
Typ.
Max.
Units
--
--
--
--
--
--
--
8.5
6.5
31
8.5
14.5
2.8
6.3
--
--
--
--
nC
ns
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
P a g e 2 o f 1 0
2012
Huajing Discrete Devices
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
trr
Qrr
Parameter
Continuous Source Current (Body Diode)
Maximum Pulsed Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
=4.0A,V
GS
=0V
I
S
=4.0A,T
j
= 25°C
dI
F
/dt=100A/us,
V
GS
=0V
R
○
CS4N60 A3HD
Test Conditions
Min.
Rating
Typ.
Max.
Units
A
A
V
ns
nC
--
--
--
--
--
--
--
--
430
1270
4
16
1.5
--
--
Pulse width tp≤380µs,δ≤2%
Symbol
R
θ
JC
R
θ
JA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
1.67
62.5
Units
℃/W
℃/W
Gate-source Zener diode
Symbol
V
GSO
Parameter
Gate-source breakdown voltage
Test Conditions
Min.
I
GS
=
±1mA(Open
Drain)
Rating
Typ.
Max.
Units
V
30
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
：Repetitive
rating; pulse width limited by maximum junction temperature
：L=10mH,
I
D
=6.3A, Start T
J
=25℃
a3
：I
SD
=4A,di/dt
≤100A/us,V
DD
≤BV
DS,
Start T
J
=25℃
a2
a1
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 3 of 10
2012
Huajing Discrete Devices
Characteristics Curve：
100
R
○
CS4N60 A3HD
80
PD , Power Dissipation
，Watts
70
60
50
40
30
20
10
Id , Drain Current , Amps
10
10μs
100μs
1ms
1
0 .1
OPERATION IN THIS AREA
MAY BE LIMITED BY R
DS(ON)
T
J
=MAX RATED
T
C
=25℃ Single Pulse
10ms
100ms
DC
0 .0 1
1
10
100
V d s , D r a in - to - S o u rc e V o lta g e , V o lts
1000
0
0
25
50
75
100
TC , Case Temperature , C
125
150
Figure 1 Maximun Forward Bias Safe Operating Area
6
Id , Drain Current , Amps
5
Id , Drain Current , Amps
Figure 2 Maximun Power Dissipation vs Case Temperature
6
PULSE DURATION=10μs
DUTY FACTOR=0.5%MAX
Tc = 25℃
4.5
V
GS
=15V
4
3
2
1
0
0
25
75
100
125
50
TC , Case Tem perature , C
150
V
GS
=7V
3
V
GS
=6.5V
V
GS
=6V
1.5
V
GS
=4.5V
V
GS
=5.5V
0
0
5
10
15
20
Vds , Drain-to-Source Voltage , Volts
25
Figure 3 Maximum Continuous Drain Current vs Case Temperature
1
Thermal Impedance, Normalized
50%
20%
Figure 4 Typical Output Characteristics
0.1
10%
5%
2%
P
DM
0.01
Single pulse
t1
t2
1%
NOTES：
DUTY FACTOR
：D=t1/
t2
PEAK Tj=P
DM
*Z
thJC
*R
thJC
+T
C
0.001
0.00001
0.0001
0.001
0.01
Rectangular Pulse Duration,Seconds
0.1
1
Figure 5 Maximum Effective Thermal Impendance , Junction to Case
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
Page 4 of 10
2012
Huajing Discrete Devices
100
TRANSCONDUCTANCE MAY LIMIT
CURRENT IN THIS REGION
R
○
CS4N60 A3HD
Idm , Peak Current , Amps
FOR TEMPERATURES
ABOVE 25℃ DERATE PEAK
CURRENT AS FOLLOWS:
150
−
T
C
I
=
I
25
125
10
1
1.00E-05
1.00E-04
1.00E-03
1.00E-02
t
，
Pulse Width , Seconds
1.00E-01
1.00E+00
1.00E+01
9
Id , Drain Current , Amps
7.5
6
4.5
3
1.5
0
2
-55℃
+25℃
+150℃
PULSE DURATION = 10μs
DUTY CYCLE = 0.5%MAX
V
DS
=30V
Figure 6 Maximun Peak Current Capability
6
Rds(on), Drain to Source ON
Resistance , Ohms
5
4
3
2
1
0
3
4
5
Vgs , Gate to Source Voltage , Volts
6
PULSE DURATION = 10μs
DUTY FACTOR = 0.5%MAX
Tc =25
℃
I
D
= 4A
I
D
= 2A
I
D
= 1A
Figure 7 Typical Transfer Characteristics
3
Rds(on), Drain to Source ON
Resistance, Ohms
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
Tc =25
℃
6
8
10
12
14
Vgs , Gate to Source Voltage
，
Volts
Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage
and Drain Current
Rds(on), Drain to Source ON Resistance,
Nomalized
2.5
2.25
2
1.75
1.5
1.25
1
0.75
0.5
PULSE DURATION = 10μs
DUTY CYCLE= 0.5%MAX
VGS=10V ID=2A
4
2.5
2
V
GS
=20V
1.5
1
0
2
3
Id , Drain Current , Amps
Figure 9 Typical Drain to Source ON Resistance
vs Drain Current
1
4
-50
0
50
100
Tj, Junction temperature , C
150
Figure 10 Typical Drian to Source on Resistance
vs Junction Temperature
Page 5 of 10
W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D .
2012
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