TX15N10B
N channel 100V MOSFET
Description
The TX15N10B is the N-Channel logic enhancement
mode power field effect transistorsare produced using high cell
density, DMOS trench technology.This high density process
isespecially tailored to minimize on-state resistance.These
Features
V
DS
R
DS(on)Max.
I
D
100V
100mΩ
15A
cell design
for
devices are particularly suited for lowvoltage application such● Super high density
as cellular phone, notebook computer power management and extremely low R
DS(ON)
otherbattery powered circuits,and low in-line power loss that●Exceptional on-resistance and maximum
DC current capability
are needed in a very smalloutlinesurface mount package.
Pin configuration
Order Number
TX15N10B
Package
TO-252
1
3
TO-252
2
Maximum Ratings (
Tc = 25℃ unless otherwise noted*)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Tc=25℃
Tc=70℃
Tc=25℃
Tc=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
J
,T
stg
Ratings
100
±20
15
14
59
34.7
22.2
-55~+175
Units
V
V
A
A
A
W
℃
Operating Junction and Storage Temperature Range
* Dran current limited by maximum junction temperature.
Thermal Characteristics
Parameter
Thermal resistance, case to sink typ.
Thermal resistance junction to case.
Thermal resistance junction to ambient.
Symbol
RthCS
RthJC
RthJA
Ratings
0.5
3.6
110
Units
℃/W
℃/W
℃/W
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TX15N10B
N channel 100V MOSFET
Electrical characteristics
Symbol
STATIC
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
V
SD
Parameter
(TA =25℃ Unless Otherwise Specified)
Test Conditions
Min.
Typ.
Max.
Units
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Diode Forward Voltage
V
GS
=0V, I
D
=250μA
V
DS
=V
GS
, I
D
=250μA
V
DS
=0V, V
GS
=±20V
V
DS
=100V, V
GS
=0V
V
GS
=10V, I
D
=8A
I
S
=8A, V
GS
=0V
100
1
—
—
—
—
—
—
—
—
80
0.9
—
3
±100
1
100
1.2
V
V
nA
μA
mΩ
V
DYNAMIC
Q
g
Q
g
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DS
=50V, R
G
=1Ω
R
L
=5Ω,V
GEN
=10V,
V
DS
=15V, V
GS
=0V, f=1MHz
V
DS
=0V,V
GS
=0V, f=1MHz
V
DD
=80V, V
GS
=4.5V, I
D
=10A
V
DD
=80V, V
GS
=10V, I
D
=10A
—
—
—
—
—
—
—
—
—
—
—
24
13
4.6
7.6
0.9
890
58
23
14
33
39
5
—
—
—
—
—
—
—
—
—
—
—
ns
pF
Ω
nC
Notes :a. Pulse test:pulse width 300 us,duty cycle 2% ,Guaranteed by design,not subject to production testing.
b. XDSSEMI reserves the right to improve product design,functions and reliability without notice.
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TX15N10B
N channel 100V MOSFET
Typical Characteristics
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
(TJ =25℃ Noted)
0.15
On Resistance vs.Junction Temperature
On Resistance vs.
Drain Current
0.1
VGS=10V
0.05
-25
Junction Temperature,T
j
(℃)
0
25
50
75
100
125
150
0 0
2
Drain Current,I
D
(A)
4
6
8
10
1200
Capacitance
On Resistance vs. Gate-to-Source Voltage
0.4
900
Ciss
0.3
300
0.2
300
Coss
0 0
Crss
5
10
15
20
25
30
ID=8A
0.1
0 0
Drain-Source Voltage,V
DS
(V)
Gate-to-Source Voltage,V
GS
(V)
2
4
6
8
10
0.4
Threshold Voltage
15
Gate Charge Characteristics
VGS=5V~10V
VGS=4V
0.2
0
ID=250uA
12
9
-0.2
6
-0.4
-0.6
-50
3
VGS=3V
0
-25
0
Temperature,T
j
(℃)
25
50
75
100
125
150
0
1
2
3
4
Drain-Source Voltage,V
DS
(V)
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TX15N10B
N channel 100V MOSFET
Typical Characteristics(TJ=25℃)
10
8
VDS=80V
ID=10A
10
Body diode characteristics
6
4
1
2
Tc=25℃
0 0
5
10
15
20
25
0 0
0.2
0.4
0.6
0.8
1
1.2
1.4
Total Gate Charge,Q
g
(nC)
Source-Drain Voltage,V
SD
(V)
Maximum Forward Biased Safe Operating Area
100
RDS
(ON)
Limited
100ms
10
1S
10S
DC
Single Pulse Maximum Power Dissipation
50
40
30
20
1
10
00.1
Tc=25℃
1
10
100
1000
Tc=25℃
0
0.001
0.01
0.1
1
10
100
1000
Drain-Source Voltage,V
DS
(V)
Time,t1(sec)
1
Normalized Thermal Transient Impedance,Junction to Ambient
50%
20%
0.1
10%
5%
2%
1%
Sing Pulse Curve
0.01
1E-5
1E-4
1E-3
1E-2
Notes:
P
DM
t
1
t
2
1.Duty Cyde,D=t1/t2
2.Per Unit Base =RthJC=3.6℃/W
3.TJM-TA=PDM ZthJA(t)
4.Surface Mounted
1E-1
1
Square Wave Pulse Duration(sec)
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TX15N10B
N channel 100V MOSFET
SOT-89
Unit：mm
Making
LO G O
PAR T N U M BER
"D " T O -252
"A " G R A N D E
H S 15N 10
DA
YM M
D A TE C O D E :
"Y "=LA S T D I I O F
G T
C A LE N D A R Y E A R
"W W "=W O R K W E E K
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