WSF25N20
N-Ch MOSFET
General Description
The
WSF25N20
is the highest performance trench
N-Ch MOSFET
with extreme high cell density,which
provide excellent RDSON and gate charge for most
of the synchronous buck converter applications .
The
WSF25N20
meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Product Summery
BV
DSS
200V
Applications
R
DSON
60mΩ
I
D
25A
High Frequency Point-of-Load Synchronous
Buck Converter
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Load Switch
TO-252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
P
D
@T
c
=100℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Rating
200
±20
25
16
3.7
3.0
75
35
6.5
113
45
-55 to 150
-55 to 150
3
Units
V
V
A
A
A
A
A
mJ
A
W
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
Total Power Dissipation
3
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
50
1.1
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WSF25N20
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=12A
V
GS
=6.0V , I
D
=10A
V
GS
=V
DS
, I
D
=250uA
V
DS
=160V , V
GS
=0V , T
J
=25℃
V
DS
=160V , V
GS
=0V , T
J
=55℃
V
GS
=±25V
, V
DS
=0V
V
DS
=5V , I
D
=8A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=100V , V
GS
=10V , I
D
=12A
Min.
200
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=30V , V
GS
=10V , R
G
=6Ω,
I
D
=12A,
R
L
=30Ω
---
---
---
---
V
DS
=30V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.098
60
85
1.5
-4.57
---
---
---
20
2
40
14
10
16
7
37
15
2350
155
45
Max.
---
---
75
150
2.5
---
1
5
±100
---
4
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.5mH , I
AS
=6.5A
Min.
10
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
F
=12A , dI/dt=100A/µs , T
J
=25℃
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=12A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
75
250
Max.
12
36
1.3
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<=10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.5mH,I
AS
=6.5A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSF25N20
N-Ch MOSFET
Typical Characteristics
Power Dissipation
125
30
Drain Current
100
25
I
D
- Drain Current (A)
T
C
=25 C
0
20
40
60
80
100 120 140 160
o
P
tot
- Power (W)
20
15
75
50
10
25
5
T
C
=25 C,V
G
=10V
0
20
40
60
80
100 120 140 160
o
0
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
100
it
Thermal Transient Impedance
Normalized Transient Thermal Resistance
3
1
0.2
Duty = 0.5
200
Lim
I
D
- Drain Current (A)
100
µ
s
10
Rd
s( o
0.1
0.02
0.1
0.05
n)
0.01
0.01
1
1ms
DC
1E-3
Single Pulse
0.1
0.01
T
C
=25 C
o
10ms
0.1
1
10
100
1000
1E-4
1E-6
R
θ
JC
:1.1 C/W
o
1E-5
1E-4
1E-3
0.01
0.1
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
www.winsok.tw
Page
3
Dec.2014
WSF25N20
N-Ch MOSFET
Typical Characteristics
Output Characteristics
50
V
GS
=6,7,8,9,10V
120
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
40
5.5V
100
I
D
- Drain Current (A)
80
V
GS
=10V
60
40
30
20
10
5V
20
0
0
4.5V
0
2
4
6
8
10
0
8
16
24
32
40
V
DS
- Drain - Source Voltage (V)
Gate-Source On Resistance
160
I
DS
=12A
2.0
I
D
- Drain Current (A)
Gate Threshold Voltage
I
DS
=250
µ
A
140
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
3
4
5
6
7
8
9
10
1.5
120
100
1.0
80
0.5
60
40
0.0
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
www.winsok.tw
Page
4
Dec.2014
WSF25N20
N-Ch MOSFET
Typical Characteristics
Output Characteristics
50
V
GS
=6,7,8,9,10V
120
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
40
5.5V
100
I
D
- Drain Current (A)
80
V
GS
=10V
60
40
30
20
10
5V
20
0
0
4.5V
0
2
4
6
8
10
0
8
16
24
32
40
V
DS
- Drain - Source Voltage (V)
Gate-Source On Resistance
160
I
DS
=12A
2.0
I
D
- Drain Current (A)
Gate Threshold Voltage
I
DS
=250
µ
A
140
R
DS(ON)
- On - Resistance (mΩ)
Normalized Threshold Voltage
3
4
5
6
7
8
9
10
1.5
120
100
1.0
80
0.5
60
40
0.0
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
www.winsok.tw
Page
5
Dec.2014
Microchip MCU
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