WSR80N08
N-Ch
MOSFET
General Description
The
WSR80N08
is the highest performance trench
N-ch MOSFET with extreme high cell density,which
provide excellent R
DSON
and gate charge for most of
the synchronous buck converter applications .
The
WSR80N08
meet the RoHS and Green Product
requirement,100% EAS guaranteed with full function
reliability approved.
Product Summery
BV
DSS
80V
Applications
R
DSON
8.4mΩ
I
D
80A
Power Management
DC/DC Converter
Load Switch
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
TO-220AB Pin Configuration
D
G
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
J
R
θJA
R
θJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25°Continuous
Drain Current
.
Lead current limit.
S
Rating
80
±20
80
75
320
30
1.0
230
-55 to 175
-55 to 175
175
62
0.65
Units
V
V
A
A
A
mJ
J
W
℃
℃
℃
℃/W
℃/W
T
C
= 25°C,pulse width limited by T
JM
T
C
= 25°C,Avalanche
Current.
TC = 25°C,Single
Pulse Avalanche Energy
3
TC = 25°C,Single
Pulse Avalanche Energy
3
TC = 25°C,Total
Power Dissipation
4
Operating Junction Temperature Range
Storage Temperature Range
MAX Junction
Temperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
www.winsok.tw
Page 1
Dec.2014
WSR80N08
N-Ch
MOSFET
Electrical Characteristics (TJ=25℃, unless otherwise noted)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V , V
GS
=0V , f=1MHz
V
DS
=60V, V
GS
=10V ,
R
G
=2.5Ω, I
D
=40A.
V
DS
=60V,V
GS
=10V,I
D
=40A
.
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V,I
D
=40A.
V
GS
=V
DS
, I
D
=250uA
V
DS
=55V , V
GS
=0V , T
J
=25℃
V
DS
=55V , V
GS
=0V , T
J
=85℃
V
GS
=±20V
, V
DS
=0V
V
DS
=10V , I
D
=40A
V
DS
=0V , V
GS
=0V , f=1MHz
Min.
80
---
---
2.0
---
---
---
---
35
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.096
8.4
---
-5.5
---
---
---
55
1.8
180
42
75
50
75
95
31
4800
1670
590
Max.
---
---
9.5
4.0
---
50
1000
±100
---
3.8
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
Diode Characteristics(T
J
= 25°C, unless otherwise specified)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
1,6
Conditions
V
GS
=0V,
pulse width limited by T
JM
V
GS
=0V , I
S
=I
F
.
Note2
I
F
=25A
,
d
I
/d
t
=100A/µs.
Min.
---
---
---
---
---
Typ.
---
---
---
200
500
Max.
80
320
1.5
---
---
Unit
A
A
V
nS
nC
Note :
1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<=10sec.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3. The EAS data shows Max. rating . The test condition is V
DS
=25V,V
GS
=10V,L=0.1mH,I
AS
=25A
4. The power dissipation is limited by 150℃ junction temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSR80N08
N-Ch
MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
40
30
20
10
0
V
GS
=10,9,8,7V
120
100
75
50
25 C
25
0
T
J
=125 C
-55 C
4
6
8
10
I
D
, Drain Current (A)
V
GS
=5V
V
GS
=4V
0
0.5
1
1.5
2
I
D
, Drain Current (A)
0
2
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
6000
5000
4000
3000
2000
1000
0
Coss
Crss
0
5
10
15
20
25
Ciss
2.6
2.2
1.8
1.4
1.0
0.6
0.2
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=40A
V
GS
=10V
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
2
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
1
10
-25
0
25
50
75
100
125
150
0
0.3
0.6
0.9
1.2
1.5
1.8
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
www.winsok.tw
Page
3
Dec.2014
WSR80N08
N-Ch
MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
6
4
2
0
V
GS
, Gate to Source Voltage (V)
V
DS
=60V
I
D
=75A
10
3
R
DS(ON)
Limit
I
D
, Drain Current (A)
10
2
100ms
1ms
10ms
DC
10
1
0
20
40
60
80
100
120
10
0
T
C
=25 C
T
J
=175 C
Single Pulse
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
V
DS
, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
r(t),Normalized Effective
Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t
1
t
2
10
-2
1. R
θJC
(t)=r (t) * R
θJC
2. R
θJC
=See Datasheet
3. T
JM-
T
C
= P* R
θJC
(t)
4. Duty Cycle, D=t1/t2
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Square Wave Pulse Duration (msec)
Figure
9.
Normalized Thermal Transient Impedance Curve
www.winsok.tw
Page
4
Dec.2014
Attention
1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Winsok power representative nearest you before using any Winsok power products described or
contained herein in such applications.
2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Winsok power products described or contained herein.
3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always
evaluate and test devices mounted in the customer’s products or equipment.
4, Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents
or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Winsok power Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to product/technology
improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you
Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without
notice.
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