WST2333
P-Ch MOSFET
General Description
The
WST2333
is the highest performance trench
P-Ch MOSFET
with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The
WST2333
meet the RoHS and Green
Product requirement with full function reliability
approved.
Product Summery
BVDSS
-12V
Applications
RDSON
23mΩ
ID
-6A
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
SOT-23N Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
c
=25℃
I
D
@T
c
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
2
3
1
Rating
-12
±8
-6
-3.9
-18.8
1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Continuous Drain Current, V
GS
@ -4.5V
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
Thermal Resistance Junction-Case
1
1
Typ.
---
---
Max.
125
80
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WST2333
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-4.5V , I
D
=-4A
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=-12V , V
GS
=0V , f=1MHz
V
DD
=-10V , V
GS
=-4.5V , R
G
=3.3Ω
I
D
=-4A
V
DS
=-15V , V
GS
=-4.5V , I
D
=-4A
V
GS
=-2.5V , I
D
=-2A
V
GS
=-1.8V , I
D
=-1.5A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-12V , V
GS
=0V , T
J
=25℃
V
DS
=-12V , V
GS
=0V , T
J
=55℃
V
GS
=±8V
, V
DS
=0V
V
DS
=-5V , I
D
=-4A
-0.3
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Min.
-12
---
---
---
Typ.
---
-0.01
23
32
42
-0.5
2.96
---
---
---
21
27.3
3.6
6.5
9.2
59
99
71
1025
220
187
Max.
---
---
32
40
52
-1.0
---
-1
-5
±100
---
38.2
5.0
9.1
18.4
106
198
142
---
---
---
pF
ns
nC
V
mV/℃
uA
nA
S
mΩ
Unit
V
V/℃
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
Pulsed Source Current
2,4
2
1,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
---
52
28
Max.
-4.7
-18.8
-1
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
F
=-4A , dI/dt=100A/µs , T
J
=25℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WST2333
P-Ch MOSFET
Typical Characteristics
20
50
I
D
=-4A
V
GS
=-5V
16
-I
D
Drain Current (A)
V
GS
=-4.5V
V
GS
=-3V
40
12
V
GS
=-2.5V
8
V
GS
=-1.8V
4
0
0
0.25
0.5
0.75
1
1.25
R
DSON
(mΩ)
30
20
1
2
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
3
4
5
Fig.1 Typical Output Characteristics
8
Fig.2 On-Resistance vs. Gate-Source
-I
S
Source Current(A)
6
T
J
=150
℃
4
T
J
=25
℃
2
0
0
0.4
0.8
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3
Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
1.4
Normalized
V
GS(th)
1.0
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (℃ )
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
www.winsok.tw
Page
3
Dec.2014
Attention
1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Winsok power representative nearest you before using any Winsok power products described or
contained herein in such applications.
2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Winsok power products described or contained herein.
3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always
evaluate and test devices mounted in the customer’s products or equipment.
4, Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents
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implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you
Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without
notice.
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