WSP10N10
N-Ch MOSFET
General Description
The
WSP10N10
is the highest performance
trench N-Ch MOSFET with extreme high cell
density , which provide excellent RDSON
and gate charge for most of the
synchronous buck converter applications .
The WSF08N10 meet the RoHS and Green
Product requirement , 100% EAS
guaranteed with full function reliability
approved.
Product Summery
BVDSS
100V
Applications
RDSON
22mΩ
ID
10A
Power Management in DC/DC Converter.
SOP-8 Pin Configuration
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=70℃
I
DM
EAS
I
AS
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
±20
10
8.2
60
42
30
3.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
40
24
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WSP10N10
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=10A
V
GS
=4.5V , I
D
=6.5A
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25℃
V
DS
=80V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=80V , V
GS
=10V , I
D
=10A
Min.
100
---
---
---
1.5
---
---
---
---
---
---
---
---
---
V
DD
=30V , V
GEN
=10V , R
G
=6Ω
I
D
=1A
,R
L
=30Ω
---
---
---
---
V
DS
=30V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.098
22
25
2.0
-5.52
---
---
---
0.65
28
9
10
12
4
17
5
1769
164
53
Max.
---
---
28
31
2.5
---
10
100
±100
1.0
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.3mH , I
AS
=10A
Min.
30
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=6A , T
J
=25℃
IF=10A , dI/dt=100A/µs , T
=
25℃
J
Min.
---
---
---
---
---
Typ.
---
---
---
27
28
Max.
5
30
1.1
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.3mH,I
AS
=10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSP10N10
N-Ch MOSFET
Typical Characteristics
15
45
I
D
=10A
12
V
GS
=10V
V
GS
=7V
V
GS
=5V
40
35
30
25
I
D
Drain Current (A)
9
V
GS
=4.5V
V
GS
=3V
6
3
R
DSON
(mΩ)
20
15
0
0.2
0.4
0.6
0.8
1
0
6
7
V
DS
, Drain-to-Source Voltage (V)
V
GS
(V)
8
10
Fig.1 Typical Output Characteristics
12
Fig.2 On-Resistance vs. Gate-Source
V
DS
=30V
I
D
=10A
10
I
S
Source Current(A)
8
6
4
2
T
J
=150℃
T
J
=25℃
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
1.8
Fig.4 Gate-Charge Characteristics
2.5
Normalized
V
GS(th)
(V)
1.4
1
0.6
0.2
-50
0
50
100
150
Normalized On Resistance
2.0
1.5
1.0
0.5
T
J
,Junction Temperature (℃ )
-50
T
J
, Junction Temperature (℃)
0
50
100
150
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
www.winsok.tw
Page
3
Dec.2014
WSP10N10
N-Ch MOSFET
10000
F=1.0MHz
Ciss
Capacitance (pF)
1000
Coss
100
Crss
10
1
5
9
13
17
21
25
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJA
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
0.01
P
DM
T
ON
T
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
www.winsok.tw
Page
4
Dec.2014
Attention
1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Winsok power representative nearest you before using any Winsok power products described or
contained herein in such applications.
2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Winsok power products described or contained herein.
3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always
evaluate and test devices mounted in the customer’s products or equipment.
4, Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents
or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
6, No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical,
including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Winsok power Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to product/technology
improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you
Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without
notice.
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