WSD3042DN56
N-Ch MOSFET
Features
•
30V/40A,
R
DS(ON)
= 10.8mΩ (max.) @ V
GS
=10V
R
DS(ON)
= 12mΩ (max.) @ V
GS
=4.5V
R
DS(ON)
= 16mΩ (max.) @ V
GS
=2.5V
Pin Description
•
100% UIS+Rg tested
•
Reliable and Rugged
•
Lead Free and Green Devices Available
(RoHS Compliant)
DFN5x6A-8_EP
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
•
Application for NB Adapter in.
(T
A
= 25°C Unless Otherwise Noted)
Rating
30
±12
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
Steady State
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
t
≤
10s
Steady State
L=0.1mH
L=0.1mH
10
40
26
90
32
12.8
3.9
9
7
36
1.5
1
34
84
20
20
W
°C/W
A
mJ
A
W
°C/W
A
Unit
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
I
DM
P
D
R
θJC
I
D
I
DM
P
D a
R
θJ
a b,c
I
AS d
E
AS d
Note
Note
Note
Note
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
V
°C
a：R
θJA
steady state t=999s.
b：t
≤10s
and surface mounted on FR-4 board using 1in
2
pad, 2 oz Cu.
c：Steady time = 999s and surface mounted on FR-4 board using 1in
2
pad, 2 oz Cu.
o
o
d：UIS tested and pulse width limited by maximum junction temperature 150 C (initial temperature T
j
=25 C).
www.winsok.tw
Page 1
Dec.2014
WSD3042DN56
N-Ch MOSFET
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
BV
DSSt
I
DSS
V
GS(t h)
I
GSS
R
DS(ON)
Gfs
V
SD
t
rr
t
a
t
b
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON )
t
r
t
d(OFF)
t
f
e
e
(T
A
= 25°C unless otherwise noted)
Test Conditions
Min.
30
34
-
-
0.5
-
-
-
-
-
-
-
I
SD
=10A, dl
SD
/dt=100A/µs
-
-
-
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
-
-
-
V
DS
=15V, V
GS
=10V,
I
DS
=10A
Typ.
-
-
-
-
0.85
-
9
9.6
12
45
0.75
12.2
7.5
4.6
5.6
2.4
1150
120
85
9.6
10
29
4.5
Max.
-
-
1
30
1.3
±100
10.8
12
16
-
1.3
-
-
-
-
4.3
1500
-
-
18
18
53
8
ns
pF
nC
Ω
ns
S
V
mΩ
Unit
V
V
µA
V
nA
Parameter
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
(transient)
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
D(av al)
=20A
T
c ase
=25°C, t
transient
=100ns
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±12V, V
DS
=0V
V
GS
=10V, I
DS
=10A
V
GS
=4.5V, I
DS
=7A
V
GS
=2.5V, I
DS
=5A
V
DS
=25V, I
DS
=20A
I
SD
=3A, V
GS
=0V
Diode Characteristics
Dynamic Characteristics
Gate Charge Characteristics
Q
g
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
DS
=10A
-
-
-
-
-
25.5
11
0.85
2.4
3.4
36
12
-
-
-
nC
Note e：Pulse test ; pulse width≤300µs, duty cycle≤2%.
www.winsok.tw
Page
2
Dec.2014
WSD3042DN56
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
40
50
Drain Current
32
40
I
D
- Drain Current (A)
P
tot
- Power (W)
24
30
16
20
8
o
10
T
C
=25 C,V
G
=10V
0
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
o
0
T
C
=25 C
0
20
40
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
300
100
Li
m
it
Thermal Transient Impedance
3
1
0.2
0.1
Duty = 0.5
I
D
- Drain Current (A)
R
ds
(o
n)
100
µ
s
0.1
0.02
0.05
10
0.01
0.01
1ms
1
DC
T
C
=25 C
o
1E-3
Single Pulse
0.1
0.1
1
10
100
1E-4
1E-6
R
θ
JC
:3.9 C/W
o
1E-5
1E-4
1E-3
0.01 0.05
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
www.winsok.tw
Page
3
Dec.2014
WSD3042DN56
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Safe Operation Area
100
2
Thermal Transient Impedance
Normalized Transient Thermal Resistance
1
0.2
0.1
0.05
Duty = 0.5
I
D
- Drain Current (A)
Rd
s( o
10
n)
Lim
it
0.1
0.01
0.02
300
µ
s
1ms
1
10ms
0.01
Single Pulse
0.1
0.01
T
A
=25 C
O
DC
1s
100ms
0.1
1
10
100
1E-3
1E-4 1E-3 0.01 0.1
Mounted on 1in pad
o
R
θ
JA
:84 C/W
2
1
10
100 1000
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Output Characteristics
90
V
GS
=3,4,5,6,7,8,9,10V
2.5V
24
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
75
20
I
D
- Drain Current (A)
60
16
V
GS
=2.5V
45
2V
12
V
GS
=4.5V
V
GS
=10V
30
8
15
1.5V
0
4
0
0
1
2
3
4
5
0
15
30
45
60
75
90
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
www.winsok.tw
Page
4
Dec.2014
WSD3042DN56
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Gate-Source On Resistance
30
I
DS
=10A
1.4
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
25
Normalized Threshold Voltage
1
2
3
4
5
6
7
8
9
10
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
20
15
10
5
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Drain-Source On Resistance
2.5
V
GS
= 10V
I
DS
= 10A
2.0
90
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
10
T
j
=150 C
o
1.5
T
j
=25 C
1
o
1.0
0.5
R
ON
@T
j
=25 C: 9m
Ω
0
25
50
75
100 125 150
o
0.0
-50 -25
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
www.winsok.tw
Page
5
Dec.2014
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