WSD3070DN
N-Ch MOSFET
Features
Product Summery
•
100% UIS + R
g
Tested
•
Avalanche Rated
•
Reliable and Rugged
•
Lead Free and Green Devices Available
(RoHS Compliant)
BVDSS
25V
RDSON
3.4mΩ
(max.)
ID
70A
DFN3.3x3.3-8-EP Pin Configuration
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Absolute Maximum Ratings
Symbol
Common Ratings
V
DSS
V
GSS
T
J
T
STG
I
S
I
D
I
DM
P
D
R
θJC
I
D
P
D
R
θJA
I
AS c
E
AS c
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Continuous Drain Current
Maximum Power Dissipation
Parameter
(T
A
= 25°C Unless Otherwise Noted)
Rating
25
±12
150
-55 to 150
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
Steady State
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
t
≤
10s
Steady State
L=0.1mH
L=0.1mH
70
a
70
a
60
200
25
2
20
16
1.78
1.14
35
70
50
125
b
Unit
V
°C
A
62.5
W
°C/W
A
W
°C/W
A
mJ
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
Note a：Package is limited by 50A.
Note b：Pulse width is limited by maximum junction temperature.
Note c：UIS tested and pulse width is limited by maximum junction temperature 150
o
C (initial temperature T
J
= 25
o
C).
www.winsok.tw
Page 1
Dec.2014
WSD3070DN
N-Ch MOSFET
Electrical Characteristics
Symbol
Static Characteristics
BV
D SS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
Gfs
V
SD d
t
rr
t
a
t
b
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
d
(T
A
= 25°C Unless Otherwise Noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Forward Transconductance
Test Conditions
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
G S
, I
DS
=250µA
V
GS
=±12V, V
DS
=0V
V
GS
=4.5V, I
DS
=20A
T
J
=125°C
V
GS
=2.5V, I
DS
=20A
V
DS
=5V, I
DS
=20A
I
SD
=20A, V
G S
=0V
Min.
25
-
-
0.5
-
-
-
-
-
Typ.
-
-
-
0.8
-
2.5
3.9
3.0
74
Max.
-
1
30
1.1
±10
3.4
-
4.0
-
Unit
V
µA
V
µA
mΩ
S
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
e
-
-
-
-
-
0.7
14.8
7.1
7.7
3.9
0.85
4920
510
350
16.6
12.2
135
48
1.1
-
-
-
-
-
-
-
-
31
23
244
87
V
ns
I
F
=20A, dl
SD
/dt=100A/µs
nC
Ω
pF
Dynamic Characteristics
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
GS
=0V,V
DS
=0V, F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
ns
e
Gate Charge Characteristics
Q
g
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=4.5V,
I
DS
=20A
V
DS
=15V, V
GS
=10V,
I
DS
=20A
-
-
-
-
-
47
96
2.75
5.5
16
66
134
3.8
7.7
22
nC
Note d：Pulse test; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note e：Guaranteed by design, not subject to production testing.
www.winsok.tw
Page
2
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
70
60
50
60
Drain Current
50
I
D
- Drain Current (A)
o
40
P
tot
- Power (W)
40
30
20
10
0
T
C
=25 C
0
20
40
60
80 100 120 140 160
30
20
10
T
C
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
0
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
500
3
Thermal Transient Impedance
Normalized Transient Thermal Resistance
1
0.2
Duty = 0.5
L im
100
0.1
0.02
0.1
0.05
I
D
- Drain Current (A)
Rd
s( o
n)
it
0.01
0.01
1ms
10
1E-3
1E-4
Single Pulse
1
0.01
T
C
=25 C
o
DC
10ms
0.1
1
10
100 300
1E-5
1E-6
R
θ
JC
:2 C/W
o
1E-5
1E-4
1E-3
0.01
0.1
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
www.winsok.tw
Page
3
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
150
V
GS
=3,4,5,6,7,8,9,10V
2V
6
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
125
5
I
D
- Drain Current (A)
100
4
V
GS
=2.5V
3
V
GS
=4.5V
2
75
50
25
1.5V
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
0
30
60
90
120
150
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
15
I
DS
=20A
12
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
Gate Threshold Voltage
I
DS
=250
µ
A
9
6
3
0
Normalized T hreshold Voltage
R
DS(ON)
- On Resistance (mΩ)
0
1
2
3
4
5
6
7
8
-25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
www.winsok.tw
Page
4
Dec.2014
WSD3070DN
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
2.5
V
GS
=4.5V
I
DS
=20A
2.0
100
Source-Drain Diode Forward
Normalized On Resistance
I
S
- Source Current (A)
1.5
10
T
j
=150 C
o
o
T
j
=25 C
1.0
1
0.5
R
ON
@T
j
=25 C: 2.5m
Ω
0
25
50
75
100 125 150
o
0.0
-50 -25
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
j
- Junction Temperature (°C)
V
SD
- Source - Drain Voltage (V)
Capacitance
7500
Frequency=1MHz
6250
10
9 I =20A
DS
V
DS
=15V
Gate Charge
V
GS
- Gate - source Voltage (V)
8
7
6
5
4
3
2
1
C - Capacitance (pF)
5000
Ciss
3750
2500
1250
Coss
0
Crss
0
5
10
15
20
25
30
0
0
20
40
60
80
100
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
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Page
5
Dec.2014
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