WSP4606
N-Ch and
P-Channel
MOSFET
General Description
The WSP4606 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSP4606 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Product Summery
BVDSS
30V
-30V
Applications
RDSON
18mΩ
30mΩ
ID
7A
-6A
Power management in half bridge and inverters
DC-DC Converter
Load Switch
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
SOP-8 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
1
Rating
N-Channel P-Channel
30
±20
7.0
6
20
72
21
2.5
-55 to 150
-55 to 150
-30
±20
-6
-4
-12
59
-19
2.08
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
85
50
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WSP4606
N-Ch and
P-Channel
MOSFET
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=6A
V
GS
=4.5V , I
D
=5A
V
GS
=V
DS
, I
D
=250uA
V
DS
=30V , V
GS
=0V , T
J
=25℃
V
DS
=30V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=15V , I
D
=5A
V
DS
=24V , V
GS
=0V , f=1MHz
V
DS
=20V , V
GS
=4.5V , I
D
=6A
Min.
30
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
V
DD
=12V , V
GS
=10V , R
G
=3.3Ω
I
D
=5A
---
---
---
---
V
DS
=25V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.034
18
25
1.5
-5.8
---
---
---
10
2.5
7.2
1.4
2.2
4.1
9.8
15.5
6.0
550
68
55
Max.
---
---
28
32
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=10A
Min.
16
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=5A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
7
20
1.2
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSP4606
N-Ch and
P-Channel
MOSFET
Electrical Characteristics (T
J
=25
℃
unless otherwise noted)
,
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-6A
V
GS
=-4.5V , I
D
=-3A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25℃
V
DS
=-24V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-10V , I
D
=-6A
V
DS
=-20V , V
GS
=-4.5V , I
D
=-6A
Min.
-30
---
---
---
-1.0
---
---
---
---
---
---
---
---
---
V
DD
=-12V , V
GS
=-10V , R
G
=3.3Ω,
I
D
=-5A
---
---
---
---
V
DS
=-25V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.085
30
48
-1.5
0.375
---
---
---
6
6.4
2.7
3.1
9
16.6
21
21.6
645
272
105
Max.
---
---
38
58
-2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-10A
Min.
16
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-10A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-6A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-6
-12
-1.2
Unit
A
A
V
www.winsok.tw
Page
3
Dec.2014
WSP4606
N-Ch and
P-Channel
MOSFET
N-Channel Typical Characteristics
10
55
V
GS
=10V
8
I
D
=6A
V
GS
=3V
35
I
D
Drain Current (A)
V
GS
=7V
6
V
GS
=4.5V
4
2
0
0
0.5
1
1.5
R
DSON
(mΩ)
V
GS
=5V
25
18
15
2
4
V
DS
Drain-to-Source Voltage (V)
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
10
6
Fig.2 On-Resistance vs. G-S Voltage
V
DS
=15V
6
V
GS
, Gate to Source Voltage (V)
8
I
D
=6A
I
S -
Source Current(A)
4.5
T
J
=150℃
4
T
J
=25℃
3
2
1.5
0
0
0.3
0.6
0.9
0
0
2.5
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
5
7.5
10
Fig.3 Forward Characteristics of Reverse
1.8
Fig.4 Gate-charge Characteristics
2.1
1.4
1
0.6
0.2
-50
Normalized On Resistance
1.8
1.5
Normalized V
GS(th)
1.2
0.9
0.6
0.3
T
J
,Junction Temperature
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
(℃)
Fig.5 V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
www.winsok.tw
Page
4
Dec.2014
WSP4606
N-Ch and
P-Channel
MOSFET
1000
100
F=1.0MHz
Ciss
Capacitance (pF)
10
10us
100us
100
I
D
(A)
Coss
Crss
1
0
10ms
100ms
T
C
=25℃
Single Pulse
DC
10
1
5
9
13
17
21
25
0
0.1
1
V
DS
Drain to Source Voltage (V)
V
DS
(V)
10
100
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
T
0.001
0.001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
www.winsok.tw
Page
5
Dec.2014
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