WSD2068
Dual
N-Ch MOSFET
General Description
The
WSD2068
is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate
charge for most of the small power switching
and load switch applications.
The
WSD2068
meet the RoHS and Green
Product requirement with full function
reliability approved.
Product Summery
BV
DSS
20V
Applications
R
DSON
15.5mΩ
I
D
7.5A
Power Management in Notebook Computer, Portable
Equipment and Battery Powered Systems.
DC-DC Power System
ESD:2KV
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
DFN2X3A_EP
Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
P
D
@T
A
=70℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
Total Power Dissipation
3
Total Power Dissipation
3
Rating
20
±12
7.5
6.5
30
1.5
1.0
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
R
θJA
Parameter
Thermal Resistance Junction-ambient (Steady State)
Thermal Resistance Junction-ambient
1
(t<10S)
1
Typ.
---
---
Max.
120
83
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WSD2068
Dual
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=4.5V , I
D
=5.5A
V
GS
=2.5V , I
D
=5.5A
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25℃
V
DS
=16V , V
GS
=0V , T
J
=55℃
V
GS
=±12V
, V
DS
=0V
V
DS
=5V , I
D
=10A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=10V , V
GS
=4.5V , I
D
=5A
Min.
20
---
---
---
0.3
---
---
---
---
---
---
---
---
---
---
V
DS
=10V , V
GS
=10V , R
G
=6Ω,
I
D
=5A
,RL=2Ω
---
---
---
---
V
DS
=10V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.022
12
16
0.7
-2.32
---
---
---
20
11
15
2.2
4.2
148
277
1616
751
1219
150
123
Max.
---
---
15.5
20
1.0
---
1
5
±100
---
---
20
---
---
---
---
---
---
1350
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BVDSS Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25℃
Min.
---
---
---
---
---
Typ.
---
---
0.76
245
1105
Max.
5
15
1.3
---
---
Unit
A
A
V
nS
nC
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
I
F
=5A
,
dI/dt=100A/µs , T
J
=25℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,
t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSD2068
Dual
N-Ch MOSFET
Typical Characteristics
0.045
RDS(on) - On-Resistance(Ω)
10
TJ = 25 C
8
1.8V
0.025
2V
2.5V
0.015
3V,3.5V,4V,4.5V,6V
0
0
2
4
ID-Drain Current (A)
10
0
0
1
2
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
0.035
6
4
2
1. On-Resistance vs. Drain Current
0.08
RDS(on) - On-Resistance(Ω)
TJ = 25 C
ID = 5A
IS - Source Current (A)
0.06
10
100
2. Transfer Characteristics
TJ = 25 C
0.04
1
0.02
0.1
0
0
2
4
0.01
0.2
0.4
0.6
0.8
1
1.2
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
3. On-Resistance vs. Gate-to-Source Voltage
10
6V,4.5V,4V,
3.5V,3V
2.5V
Capacitance (pf)
2V
6
1.8V
4
1800
4. Drain-to-Source Forward Voltage
F = 1MHz
1600
1400
1200
1000
800
600
400
200
Coss
Crss
0
5
10
15
20
Ciss
8
ID - Drain Current (A)
2
0
0
0.05
0.1
0.15
0.2
0.25
VDS - Drain-to-Source Voltage (V)
0
VDS-Drain-to-Source Voltage (V)
5. Output Characteristics
6. Capacitance
www.winsok.tw
Page
3
Dec.2014
WSD2068
Dual
N-Ch MOSFET
Typical Characteristics
10
VGS-Gate-to-Source Voltage (V)
VDS = 10V
ID = 5A
8
2
RDS(on) - On-Resistance(Ω)
(Normalized)
10
20
30
40
1.5
6
4
1
2
0
0
Qg - Total Gate Charge (nC)
0.5
-50
-25
0
25
50
75
100
125
150
TJ -JunctionTemperature(°C)
7. Gate Charge
100
10 uS
8. Normalized On-Resistance Vs
Junction Temperature
50
PEAK TRANSIENT POWER (W)
45
40
35
30
25
20
15
10
5
0
0.001
0.01
0.1
1
10
100
1000
10
ID Current (A)
100 uS
1 mS
10 mS
1
100 mS
1 SEC
10 SEC
100 SEC
0.1
DC
Idm limit
Limited by
RDS
0.01
0.1
1
10
100
1000
VDS Drain to Source Voltage (V)
t1 TIME (SEC)
9. Safe Operating Area
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
10. Single Pulse Maximum Power Dissipation
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 120 C /W
P(pk)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.001
0.0001
0.001
0.01
0.1
t1 TIME (sec)
1
10
100
1000
11. Normalized Thermal Transient Junction to Ambient
www.winsok.tw
Page
4
Dec.2014
WSD2068
Dual
N-Ch MOSFET
Package Information DFN2x3A-6_EP
E1
D
e
L
E1
PIN
1
E
b
TOP VIEW
BOTTOM VIEW
A
SIDE VIEW
A1
A3
S
Y
M
B
O
L
A
A1
A3
b
D
E1
E
D1
e
L
DFN2x3A-6_EP
MILLIMETERS
MIN.
0.70
0.00
0.203 REF
0.20
1.90
1.60
2.90
1.40
0.50 BSC
0.30
0.50
0.012
0.30
2.10
1.80
3.10
1.60
MAX.
1.00
0.05
MIN.
0.028
0.000
0.008 REF
0.008
0.075
0.063
0.114
0.055
0.02 BSC
0.020
0.012
0.083
0.071
0.122
0.063
INCHES
MAX.
0.039
0.002
RECOMMENDED LAND PATTERN
1.6
0.5
1.6
3
0.4
0.25
UNIT: mm
www.winsok.tw
Page
5
Dec.2014
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