WSF45P10
P-Ch MOSFET
General Description
The
WSF45P10
is the highest performance
trench P-Ch MOSFET with extreme high cell
density , which provide excellent R
DSON
and
gate charge for most of the small power
switching and load switch applications.
The
WSF45P10
meet the RoHS and
Green Product requirement with full
function reliability approved.
Product Summery
BV
DSS
-100V
Applications
Inverters
R
DSON
44mΩ
I
D
-40A
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent Cdv/dt effect decline
Green Device Available
TO-252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DM
I
D
P
D
R
θJC
R
θJA
E
AS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Pulsed Drain Current *
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
Parameter
Rating
-100
±20
175
-55 to 175
-40
-120**
-40
-26
136
68
1.1
62.5
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
Mounted on Large Heat Sink
Avalanche Ratings
Avalanche Energy, Single Pulsed
L=0.5mH
308***
mJ
Note： * Repetitive rating ; pulse width limiited by junction temperatur
** Drain current is limited by junction temperature
*** VD=-80V
www.winsok.tw
Page 1
Dec.2014
WSF45P10
P-Ch MOSFET
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
*
R
DS(ON)
*
V
SD
*
t
rr
Q
rr
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
=-100 V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
=-20 A
V
GS
=-4.5V, I
DS
=-20A
I
SD
=-20A, V
GS
=0V
I
SD
=-20A, dl
SD
/dt=-100A/µ s
-100
-
-
-1
-
-
-
-
-
-
-2
-
44
47
-
-1
-10
-3
±100
55
58.5
V
µA
V
nA
mΩ
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
-0.8
70
90
-1.2
-
-
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=-50V, R
G
= 6
Ω
,
I
DS
=-20A, V
GS
=-10V,
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
2
5720
790
450
30
79
82
69
-
-
-
-
-
-
-
-
ns
Gate Charge Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-80V,V
GS
=-10V,
I
DS
=-20A
-
-
-
125
21
45
-
-
-
nC
Note * : Pulse test ; pulse width
≤300
µ
s, duty cycle≤2%.
www.winsok.tw
Page
2
Dec.2014
WSF45P10
P-Ch MOSFET
Typical Characteristics
Output Characteristics
80
V
GS
= -4.0,-4.5,-10V
70
60
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
55
60
-3.5V
-I
D
- Drain Current (A)
50
40
-3V
30
20
-2V
10
0
50
V =-4.5V
GS
45
V =-10V
GS
40
35
0
1
2
3
4
5
6
0
10
20
30
40
50
-V
DS
- Drain-Source Voltage (V)
-I
D
- Drain Current (A)
Drain-Source On Resistance
120
Gate Threshold Voltage
1.6
I
DS
=-250
µ
A
I
DS
=-20A
R
DS(ON)
- On - Resistance (mΩ)
100
Normalized Threshold Vlotage
0
2
4
6
8
10
12
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
80
60
50
40
30
0
25
50
75 100 125 150 175
-V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
www.winsok.tw
Page
3
Dec.2014
WSF45P10
P-Ch MOSFET
Typical Characteristics
Drain-Source On Resistance
2.4
2.2
2.0
V
GS
=-10V
I
DS
=-20A
Source-Drain Diode Forward
100
Normalized On Resistance
-I
S
- Source Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
R
ON
@T
j
=25 C: 44m
Ω
50
75 100 125 150 175
o
10
T
j
=175 C
T
j
=25 C
o
o
1
0.1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
T
j
- Junction Temperature (°C)
-V
SD
- Source-Drain Voltage (V)
Capacitance
11000
Frequency=1MHz
10000
Gate Charge
10
9
V
DS
= -80V
I
DS
= -20A
-V
GS
- Gate-source Voltage (V)
25
30
35
40
9000
8
7
6
5
4
3
2
1
0
0
20
40
60
80
100 120 140 160
C - Capacitance (pF)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
Crss
5
10
Coss
Ciss
15
20
-V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
www.winsok.tw
Page
4
Dec.2014
WSF45P10
P-Ch MOSFET
Typical Characteristics
Power Dissipation
140
Drain Current
45
-I
D
- Drain Current (A)
T
C
=25 C
0
20 40
60
80 100 120 140 160 180 200
o
120
40
35
30
25
20
15
10
P
tot
- Power (W)
100
80
60
40
20
0
5
0
T
C
=25 C,V
G
=-10V
0
20
40
60 80 100 120 140 160 180 200
o
T
c
- Case Temperature (°C)
1000
T
c
- Case Temperature (°C)
Safe Operation Area
-I
D
- Drain Current (A)
ds
(
on
)L
im
it
100
100us
1ms
10ms
10
R
1
DC
0.1
0.1
T
C
=25 C
o
1
10
100
1000
-V
DS
- Drain - Source Voltage (V)
Thermal Transient Impedance
1
Duty = 0.5
Normalized Effective Transient
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
o
R
θ
JA
: 62.5 C/W
0.0001
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration sec
www.winsok.tw
Page
5
Dec.2014
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