WSP6067
N&P-Channel
MOSFET
General Description
The WSP6067 is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The WSP6067 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Product Summery
BVDSS
60V
-60V
Applications
RDSON
26mΩ
60mΩ
ID
6.5A
-4.5A
High Frequency Point-of-Load Synchronous
Buck Converter.
Networking DC-DC Power System
Features
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Load Switch
SOP-8 Pin Configuration
Absolute Maximum Ratings
Rating
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
EAS
I
AS
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
Avalanche Current
Total Power Dissipation
4
Storage Temperature Range
Operating Junction Temperature Range
3
N-Channel
60
±20
6.5
4.5
24
12
16
3.1
-55 to 150
-55 to 150
P-Channel
-60
±20
-4.5
-2.8
-16
16
-18
3.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
mJ
A
W
℃
℃
Thermal Data
Symbol
R
θJA
R
θJC
Parameter
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
Typ.
---
---
Max.
90
50
Unit
℃/W
℃/W
www.winsok.tw
Page 1
Dec.2014
WSP6067
N&P-Channel
MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=250uA
Reference to 25℃ , I
D
=1mA
V
GS
=10V , I
D
=6.5A
V
GS
=4.5V , I
D
=3A
V
GS
=V
DS
, I
D
=250uA
V
DS
=48V , V
GS
=0V , T
J
=25℃
V
DS
=48V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=5V , I
D
=8A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=48V , V
GS
=4.5V , I
D
=6.5A
Min.
60
---
---
---
1
---
---
---
---
---
---
---
---
---
---
V
DD
=30V , V
GS
=10V , R
G
=6Ω,
I
D
=1A
,R
L
=6Ω
---
---
---
---
V
DS
=15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
0.063
26
36
2
-5.24
---
---
---
21
3.0
14
2.6
2.2
8
6
23
6
670
70
35
Max.
---
---
36
45
3
---
1
5
±100
---
4.5
20
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=25V , L=0.1mH , I
AS
=16A
Min.
11.2
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1.7A,T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
2.5
24
1.1
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=16A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
2
Dec.2014
WSP6067
N&P-Channel
MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃,
unless otherwise noted)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25℃ , I
D
=-1mA
V
GS
=-10V , I
D
=-4.5A
V
GS
=-4.5V , I
D
=-1A
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-48V , V
GS
=0V , T
J
=25℃
V
DS
=-48V , V
GS
=0V , T
J
=55℃
V
GS
=±20V
, V
DS
=0V
V
DS
=-5V , I
D
=-4.5A
V
DS
=0V , V
GS
=0V , f=1MHz
V
DS
=-48V , V
GS
=-10V , I
D
=-4.5A
Min.
-60
---
---
---
-1.5
---
---
---
---
---
---
---
---
---
---
V
DD
=-30V , V
GS
=-10V , R
G
=6Ω,
I
D
=-1A,R
L
=30Ω.
---
---
---
---
V
DS
=-15V , V
GS
=0V , f=1MHz
---
---
Typ.
---
-0.03
60
75
-2.0
4.56
---
---
---
18
1.5
12
1.5
3.0
7.5
4.5
38
28
500
66
32
Max.
---
---
75
85
-2.5
---
1
5
±100
---
2.7
---
---
---
---
---
---
---
---
---
---
pF
ns
nC
Unit
V
V/℃
mΩ
V
mV/℃
uA
nA
S
Ω
△BV
DSS
/△T
J
BV
DSS
Temperature Coefficient
R
DS(ON)
V
GS(th)
△V
GS(th)
I
DSS
I
GSS
gfs
R
g
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Guaranteed Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
5
Conditions
V
DD
=-25V , L=0.1mH , I
AS
=-18A
Min.
11
Typ.
---
Max.
---
Unit
mJ
Diode Characteristics
Symbol
I
S
I
SM
V
SD
Parameter
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25℃
Min.
---
---
---
Typ.
---
---
---
Max.
-1
-18
-1.1
Unit
A
A
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-18A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
www.winsok.tw
Page
3
Dec.2014
WSP6067
N&P-Channel
MOSFET
N-Channel Typical Characteristics
12
35
I
D
=4.5A
10
V
GS
=10V
V
GS
=7
V
GS
=5V
V
GS
=4.5V
V
GS
=3V
33
I
D
Drain Current (A)
R
DSON
(mΩ)
2
8
6
4
30
28
2
0
0
25
V
DS
, Drain-to-Source Voltage (V)
0.5
1
1.5
2
4
V
GS
(V)
6
8
10
Fig.1 Typical Output Characteristics
12
10
10
Fig.2 On-Resistance v.s Gate-Source
I
D
=4.5A
V
GS
Gate to Source Voltage (V)
8
I
S
Source Current(A)
8
6
6
T
J
=150
℃
4
2
0
0.2
0.4
0.6
0.8
T
J
=25
℃
4
2
0
0
5
10
15
20
25
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
1.5
2.5
Fig.4 Gate-Charge Characteristics
1
0.5
0
-50
Normalized On Resistance
2.0
Normalized V
GS(th)
1.5
1.0
0.5
T
J
,Junction Temperature (℃)
0
50
100
150
-50
0
50
100
150
T
J
, Junction Temperature (℃)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
www.winsok.tw
Page
4
Dec.2014
WSP6067
N&P-Channel
MOSFET
1000
F=1.0MHz
Ciss
100.00
10.00
Capacitance (pF)
400
I
D
(A)
1.00
100us
100
Coss
0.10
Crss
Tc=25 C
Single Pulse
10
1
5
0.01
o
1ms
10ms
100m
DC
10
100
1000
V
DS
Drain to Source Voltage(V)
9
13
17
21
25
0.1
1
V
DS
(V)
Fig.7 Capacitance
1
Fig.8 Safe Operating Area
Normalized Thermal Response (R
θJC
)
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
D = T
ON
/T
T
Jpeak
= T
C
+P
DM
XR
θJC
P
DM
T
ON
T
0.1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
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Page
5
Dec.2014
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