VBP1104N
www.VBsemi.com
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
100
r
DS(on)
(Ω)
0.035 at V
GS
= 10 V
I
D
(A)
50
a
FEATURES
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
Low Thermal Resistance Package
100 % R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
• Isolated DC/DC Converters
D
TO-247AC
G
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
d
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
100
± 20
50
a
39
a
150
39
61
375
c
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Duty cycle
≤
1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
PCB Mount
Symbol
R
thJA
R
thJC
Limit
40
0.4
Unit
°C/W
1
VBP1104N
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
Test Conditions
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 100 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 °C
V
DS
= 15 V, I
D
= 30 A
Min.
100
1
Typ.
Max.
Unit
3
± 100
1
50
250
V
nA
µA
A
120
0.035
0.063
0.084
25
5100
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
480
210
90
pF
V
DS
= 100 V, V
GS
= 10 V, I
D
= 65 A
0.5
V
DD
= 100 V, R
L
= 1.5
Ω
I
D
≅
65 A, V
GEN
= 10 V, R
g
= 2.5
Ω
23
34
1.7
24
220
45
200
3.3
35
330
70
300
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 50 A, di/dt = 100 A/µs
I
F
= 65 A, V
GS
= 0 V
50
150
1.0
130
8
0.52
1.5
200
12
1.2
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBP1104N
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
140
V
GS
= 10 thru 5 V
120
I
D
- Drain Current (A)
100
80
60
40
3V
20
2V
0
0
2
4
6
8
10
0
0
1
2
3
4
5
6
7
V
DS
- Drain-to-Source Voltage (V)
20
25 °C
- 55 °C
I
D
- Drain Current (A)
4V
120
100
80
60
40
T
C
= 125 °C
140
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
180
T
C
= - 55 °C
150
r
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
25 °C
120
125 °C
90
0.045
0.060
Transfer Characteristics
V
GS
= 10 V
0.030
60
0.015
30
0
0
20
40
60
80
100
120
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
7000
6000
C
iss
C - Capacitance (pF)
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
C
rss
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 100 V
I
D
= 65 A
12
8
4
C
oss
0
0
25
50
75
100
125
150
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBP1104N
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
3.0
V
GS
= 10 V
I
D
= 30 A
I
S
- Source Current (A)
100
2.5
r
DS(on)
- On-Resistance
2.0
(Normalized)
T
J
= 150 °C
10
T
J
= 25 °C
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
1000
240
Source-Drain Diode Forward Voltage
230
100
220
I
AV
(A) at T
A
= 25 °C
10
V
(BR)DSS
(V)
I
Dav
(A)
I
D
= 1.0 mA
210
200
1
190
I
AV
(A) at T
A
= 150 °C
0.1
0.00001
0.0001
0.001
t
in
(s)
0.01
0.1
1
180
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown
vs. Junction Temperature
4
VBP1104N
www.VBsemi.com
THERMAL RATINGS
75
1000
r
DS(on)
Limited*
60
100
45
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10 µs
100 µs
10
1 ms
10 ms
100 ms
DC
30
15
1
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
100
1000
T
C
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
V
DS
- Drain-to-Source Voltage (V)
* V
GS
>
minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
Square Wave Pulse Duration (s)
10-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
5
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