VBP1606
www.VBsemi.com
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω) at V
GS
= 10 V
I
D
(A)
Configuration
Package
60
0.007
150
Single
TO-247
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• 100 % R
g
and UIS tested
TO-247AC
D
G
S
D
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
a
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 125 °C
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
150
88
120
480
65
211
175
56
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.88
UNIT
°C/W
1
VBP1606
www.VBsemi.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
c
a
SYMBOL
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
TEST CONDITIONS
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 10 V
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
≥
5 V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
MIN.
60
2.5
-
-
-
-
120
-
-
-
-
-
TYP.
-
3.0
-
-
-
-
-
0.007
0.010
0.013
94
5196
710
340
97
24.6
27.2
1
16
14
34
9
-
0.9
MAX.
-
3.5
± 100
1
50
250
-
-
-
-
-
-
-
-
-
-
-
1.7
24
21
51
14
480
1.5
UNIT
V
nA
μA
A
Ω
S
V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
pF
V
GS
= 10 V
V
DS
= 30 V, I
D
= 75 A
f = 1 MHz
-
-
0.3
-
-
-
-
-
nC
Ω
V
DD
= 30 V, R
L
= 0.4
Ω
I
D
≅
75 A, V
GEN
= 10 V, R
g
= 1
Ω
ns
Source-Drain Diode Ratings and Characteristics
b
A
V
I
F
= 75 A, V
GS
= 0
-
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBP1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
225
200
175
I
D
- Drain Current (A)
150
125
100
75
50
25
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 4V
0
0
2
4
V
GS
= 5 V
I
D
- Drain Current (A)
V
GS
= 10 V thru 6 V
120
150
90
60
T
C
= 25
°C
30
T
C
= 125
°C
T
C
= -55 °C
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
200
T
C
= -55 °C
1.2
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
160
T
C
= 25
°C
120
T
C
= 125
°C
80
0.9
0.6
T
C
= 25
°C
0.3
T
C
= 125
°C
0.0
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
T
C
= -55 °C
40
0
0
14
28
42
56
70
I
D
- Drain Current (A)
Transfer Characteristics
Transconductance
0.020
10 000
0.016
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
8000
0.012
6000
C
iss
0.008
V
GS
= 10 V
4000
0.004
2000
C
oss
C
rss
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
0.000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
0
On-Resistance vs. Drain Current
Capacitance
3
VBP1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance(Normalized)
2.1
I
D
= 10 A
V
GS
= 10 V
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 110 A
V
DS
= 20 V
1.8
6
1.5
4
1.2
2
0.9
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
0.6
-50
-25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.05
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
R
DS(on)
- On-Resistance (Ω)
0.04
0.03
0.1
T
J
= 25
°C
0.01
0.02
T
J
= 150
°C
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
V
SD
-
Source-to-Drain
Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
80
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
0.2
77
V
GS(th)
Variance (V)
-0.2
I
D
= 5 mA
74
-0.6
71
-1.0
I
D
= 250 μA
-1.4
68
-1.8
-50
-25
0
25
50
75
100
125
150
175
65
-50
-25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4
VBP1606
www.VBsemi.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
100
I
D
- Drain Current (A)
I
DM
Limited
100 μs
1 ms
10 ms
100 ms, 1
s,
10
s,
DC
10
1
Limited by R
DS(on)
*
BVDSS Limited
0.1
T
C
= 25
°C
Single
Pulse
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
Square
Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
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