VBM2610N
www.VBsemi.com
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
(Ω)
0.062 at V
GS
= - 10 V
0.074 at V
GS
= - 4.5 V
I
D
(A)
- 20
- 15
Q
g
(Typ)
12.5
FEATURES
• TrenchFET
®
Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Load Switch
S
TO-220AB
G
D
G D S
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Continuing Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
± 20
- 20
- 12
- 60
- 12
- 12
7.2
60
a
2
b
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
b
Junction-to-Case
Notes:
a. See SOA curve for voltage derating.
b. Surface Mounted on 1" x 1" FR-4 boad.
t
≤
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
20
62
5
Maximum
25
75
6
°C/W
Unit
1
VBM2610N
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 60 V, V
GS
= 0 V
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= - 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
= - 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 5 A
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= - 10 V, I
D
= - 5 A, T
J
= 125 °C
V
GS
= - 10 V, I
D
= - 5 A, T
J
= 175 °C
V
GS
= - 4.5 V, I
D
= - 2 A
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Forward Voltage
b
Reverse Recovery Time
Reverse Recovery Time
b
Symbol
Test Conditions
Min
- 60
- 1.0
Typ
a
Max
Unit
- 2.0
- 3.0
± 100
-1
- 50
- 150
V
nA
µA
A
- 10
0.100
0.200
0.300
0.120
8
850
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DS
= - 15 V, I
D
= - 5 A
S
V
DS
= - 25 V, V
GS
= 0 V, f = 1 MHz
120
90
13
pF
V
DS
= - 30 V, V
GS
= - 10 V, I
D
= - 8.4 A
f = 1 MHz
V
DD
= - 30 V, R
L
= 3.57
Ω
I
D
≅
- 8.4 A, V
GEN
= - 10 V, R
G
= 2.5
Ω
b
2.3
3.2
8.0
5
14
15
7
- 20
10
25
25
12
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
I
SM
V
SD
t
rr
Q
rr
A
- 1.3
80
120
V
ns
nC
I
F
= - 2 A, V
GS
= 0 V
I
F
= - 8 A, di/dt = 100 A/µs
- 0.9
50
80
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM2610N
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C unless noted
30
V
GS
= 10 thru 6
V
24
I
D
- Drain Current (A)
5
V
18
I
D
- Drain Current (A)
16
20
T
C
= - 55 °C
25 °C
12
125 °C
12
4
V
6
3
V
0
0
2
4
6
8
10
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Gate-to-Source
Voltage
(V)
V
DS
- Drain-to-Source
Voltage
(V)
Output Characteristics
12
T
C
= - 55 °C
10
g
fs
- Transconductance (S)
25 °C
125 °C
r
DS(on)
- On-Resistance (Ω)
0.125
0.150
Transfer Characteristics
8
0.100
V
GS
= 4.5
V
V
GS
= 10
V
6
0.075
4
0.050
2
0.025
0
0
2
4
6
8
10
0.000
0
4
8
12
16
20
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
1600
1400
V
GS
- Gate-to-Source
Voltage
(V)
16
1200
C - Capacitance (pF)
1000
800
600
400
C
oss
200
0
0
C
rss
10
20
30
40
50
60
C
iss
20
On-Resistance vs. Drain Current
V
DS
= 30
V
I
D
=
8.4
A
12
8
4
0
0
5
10
15
20
25
V
DS
- Drain-to-Source
Voltage
(V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBM2610N
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C unless noted
2.3
V
GS
= 10
V
I
D
= 50 A
1
r
DS(on)
- On-Resistance
(Normalized)
1.7
I S - Source Current (A)
T
J
= 150 °C
10
2.0
1.4
0.1
1.1
T
J
= 25 °C
0.01
0.8
0.001
- 25
0
25
50
75
100
125
150
175
0.0
0.2
0.4
0.6
0.8
1.0
0.5
- 50
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain
Voltage
(V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
10
100
10
µs
8
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
*Limited
by
r
DS(on)
100
µs
6
1
1 ms
10 ms
100 ms, DC
4
0.1
2
0.01
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.001
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*V
GS
minimum
V
GS
at
which
r
DS(on)
is specified
T
C
- Case Temperature (°C)
Drain Current vs. Case Temperature
Safe Operating Area
4
VBM2610N
www.VBsemi.com
THERMAL RATINGS
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
4
10
-−
10
- 3
10
- 2
10
- 1
1
10
100
600
Square
Wave
Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized
Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
4
10
-−
10
- 3
10
- 2
10
- 1
1
10
100
600
Square
Wave
Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
