VBA1203M
www.VBsemi.com
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
()
0.
260
at V
GS
= 10 V
I
D
(A)
3
FEATURES
•
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
D
• Primary Side Switch
SO-8
S
S
S
G
1
2
3
4
Top View
N-Channel MOSFET
8
7
6
5
D
D
D
D
S
G
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
200
± 20
3
2.7
10
6
6
18
96
b
3
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
1
VBA1203M
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=
3
A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
=
3
A, T
J
= 125 °C
V
GS
= 10 V, I
D
=
3
A, T
J
= 175 °C
V
GS
= 6 V, I
D
=
3
A
Forward
Transconductance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
I
F
=
3
A, V
GS
= 0 V
I
F
=
3
A, dI/dt = 100 A/µs
0.9
180
V
DD
= 100 V, R
L
= 5.2
Ω
I
D
≅
3
A, V
GEN
= 10 V, R
g
= 2.5
Ω
0.5
15
50
30
60
V
DS
= 100 V, V
GS
= 10 V, I
D
=
3
A
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
V
DS
= 15 V, I
D
=
3
A
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
b
Source-Drain Reverse Recovery Time
c
Symbol
Test Conditions
Min.
200
2
Typ.
a
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
40
0.
260
0.
310
0.330
0.292
35
1800
180
80
34
8
12
2.9
25
75
45
90
5
1.5
250
51
S
pF
nC
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
A
V
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBA1203M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 7 V
8
6V
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
20
4
T
C
= 125 °C
2
10
4V
25 °C
3V
0
0
2
4
6
8
10
- 55 °C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
70
60
g fs - Transconductance (S)
50
25 °C
40
125 °C
30
20
10
0
0
10
20
I
D
- Drain Current (A)
30
40
0.0
0.5
Transfer Characteristics
T
C
= - 55 °C
R
DS(on)
- On-Resistance ()
0.4
0.3
V
GS
= 6 V
V
GS
= 10 V
0.2
0
10
20
I
D
- Drain Current (A)
30
40
Transconductance
2500
20
On-Resistance vs. Drain Current
2000
C - Capacitance (pF)
C
iss
1500
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 100 V
I
D
= 19 A
12
1000
8
500
C
rss
0
0
40
80
120
160
200
C
oss
4
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBA1203M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
0.3
0.25
100
V
GS
= 10 V
I
D
= 5 A
I
S
- Source Current (A)
R
DS(on)
- On-Resistance
(Normalized)
0.2
0.15
0.1
T
J
= 150 °C
10
T
J
= 25 °C
0.05
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature ( °C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
THERMAL RATINGS
7
10
6
Limited by R
DS(on)
*
I
D
- Drain Current (A)
5
10 µs
100 µs
I
D
- Drain Current (A)
5
1 ms
4
1
T
C
= 25 °C
Single Pulse
10 ms
100 ms
1 s, DC
3
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
175
0.1
0.1
Maximum Avalanche Drain Current
vs. Case Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
10
1000
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
Square Wave Pulse Duration (s)
1
10
30
Normalized Thermal Transient Impedance, Junction-to-Case
4
VBA1203M
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
www.VBsemi.com
8
7
6
5
E
1
2
3
4
H
S
D
0.25 mm (Gage Plane)
A
h x 45
C
All Leads
q
L
0.101 mm
0.004"
e
B
A
1
MILLIMETERS
DIM
A
A
1
B
C
D
E
e
H
h
L
q
S
5.80
0.25
0.50
0°
0.44
Min
1.35
0.10
0.35
0.19
4.80
3.80
1.27 BSC
6.20
0.50
0.93
8°
0.64
0.228
0.010
0.020
0°
0.018
Max
1.75
0.20
0.51
0.25
5.00
4.00
Min
0.053
0.004
0.014
0.0075
0.189
0.150
INCHES
Max
0.069
0.008
0.020
0.010
0.196
0.157
0.050 BSC
0.244
0.020
0.037
8°
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
5
GD32 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
