b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBFB2610N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
200
V
GS
= 10 thru 6 V
160
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
V
GS
= 5 V
120
100
T
C
= - 55 °C
80
T
C
= 25 °C
60
T
C
= 125 °C
40
80
V
GS
= 4 V
40
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-SourceVoltage (V)
5
20
0
0
12
24
36
I
D
- Drain Current (A)
48
60
Output Characteristics
10
100
Transconductance
T
C
= - 55 °C
8
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
80
T
C
= 25 °C
60
T
C
= 125 °C
40
6
4
T
C
= 125 °C
2
T
C
= 25 °C
T
C
= - 55 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
20
0
0
12
24
36
I
D
- Drain Current (A)
48
60
Transfer Characteristics
0.15
1500
Transconductance
R
DS(on)
- On-Resistance (Ω)
0.12
C - Capacitance (pF)
1200
C
iss
0.09
V
GS
= 4.5 V
900
0.06
V
GS
= 10 V
0.03
600
300
C
oss
C
rss
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
60
0.00
0
20
40
60
I
D
- Drain Current (A)
80
100
0
On-Resistance vs. Drain Current
Capacitance
3
VBFB2610N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 55 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 20 V
V
DS
= 30 V
4
2.0
I
D
= 20 A
1.7
V
GS
= 10 V
6
1.4
V
GS
= 4.5 V
1.1
2
0.8
0
0
40
60
20
Q
g
- Total Gate Charge (nC)
80
0.5
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
100
0.10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 20 A
R
DS(on)
- On-Resistance (Ω)
0.08
I
S
- Source Current (A)
T
J
= 150 °C
T
J
= 25 °C
0.06
10
0.04
T
J
= 150 °C
0.02
T
J
= 25 °C
1
0.0
0.00
0.3
0.6
0.9
V
SD
- Source-to-Drain Voltage (V)
1.2
0
2
4
6
8
V
GS
-
Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
1000
75
On-Resistance vs. Gate-to-Source Voltage
I
D
= 10 mA
100
V
(BR)DSS
- (V)
72
I
Dav
- (A)
69
10
66
I
AV
(A) at T
J
= 25 °C
1
63
I
AV
(A) at T
J
= 150 °C
0.1
0.0001
0.001
0.01
T
in
- (s)
0.1
1
60
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Single Pulse Avalanche Current Capability vs. Time
Drain-Source Breakdown Voltage vs. Junction Temperature
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