c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
1
VBFB1405
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 20 A
0.8
50
70
30
20
T
C
= 25 °C
110
200
1.2
75
105
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 1.0
Ω
I
D
≅
20 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 20 V, R
L
= 1.0
Ω
I
D
≅
20 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
2380
550
250
120
40
22
0.85
20
11
77
10
102
62
180
60
1.3
30
17
115
15
155
95
270
90
ns
Ω
180
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 30 A
120
0.0050
0.0065
180
0.0064
0.0075
1.2
40
41
-8
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBFB1405
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
250
V
GS
= 10 thru 5 V
200
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4
5
150
V
GS
= 4 V
100
V
GS
= 3 V
50
3
T
C
= 125 °C
2
T
C
= 25 °C
1
T
C
= - 55 °C
0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
400
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
320
g
fs
- Transconductance (S)
0.008
0.010
Transfer Characteristics
240
T
C
= 25 °C
160
T
C
= 125 °C
0.006
V
GS
= 4.5 V
0.004
V
GS
= 10 V
80
0.002
0
0
15
30
45
60
75
90
0.0000
0
20
40
60
80
100
120
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
3000
C
iss
C - Capacitance (pF)
10
On-Resistance vs. Drain Current
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 20 V
6
V
DS
= 10 V
4
V
DS
= 30 V
2000
1000
C
oss
C
rss
0
10
20
30
40
2
0
0
0
50
100
150
200
250
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBFB1405
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2.0
I
D
= 30 A
1.7
R
DS(on)
- On-Resistance
I
S
- Source Current (A)
V
GS
= 10 V
(Normalized)
1.4
V
GS
= 4.5 V
1.1
10
T
J
= 150 °C
1
T
J
= 25 °C
100
0.1
0.8
0.01
0.5
- 50
- 25
0
25
50
75
100
125
150
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.010
0.6
Forward Diode Voltage vs. Temperature
R
DS(on)
- On-Resistance (Ω)
0.008
0.2
0.006
V
GS(th)
Variance (V)
- 0.2
I
D
= 5 mA
0.004
T
J
= 150 °C
- 0.6
0.002
T
J
= 25 °C
0.000
0
2
4
6
8
10
- 1.0
- 50
- 25
0
25
50
I
D
= 250 µA
75
100
125
150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
10 µs
100 µs
1 ms
10 ms
100 ms, DC
Threshold Voltage
10
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBFB1405
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
350
400
350
280
300
I
D
- Drain Current (A)
210
Power (W)
100
125
150
250
200
150
100
70
50
0
0
25
50
75
0
0
25
50
75
100
125
150
140
Package Limited
T
J
- Junction to Case (°C)
T
J
- Junction to Case (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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