b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBFB1311
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
50
V
GS
= 10 thru 5 V
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6
V
GS
= 4 V
8
30
4
T
C
= 25 °C
2
20
V
GS
= 3 V
10
T
C
= 125 °C
T
C
= - 55 °C
0
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
0
0.0
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.025
1250
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
1000
0.020
C - Capacitance (pF)
750
0.015
500
C
oss
250
C
rss
V
GS
= 4.5 V
0.010
V
GS
= 10 V
0.005
0
10
20
30
40
50
0
0
5
10
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 10 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 10 V
6
V
DS
= 15 V
V
DS
= 20 V
4
R
DS(on)
- On-Resistance
1.8
I
D
= 10 A
1.6
Capacitance
V
GS
= 10 V
1.4
(Normalized)
1.2
V
GS
= 4.5 V
1.0
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBFB1311
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
T
J
= 25 °C
1
R
DS(on)
- On-Resistance (Ω)
0.06
I
D
= 10 A
10
I
S
- Source Current (A)
0.05
0.04
0.03
T
J
= 125 °C
0.1
0.02
0.01
0.01
T
J
= 25 °C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
120
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
96
0.0
Power (W)
72
- 0.2
I
D
= 5 mA
- 0.4
I
D
= 250 µA
- 0.6
48
24
- 0.8
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power (Junction-to-Ambient)
I
D
- Drain Current (A)
10
1 ms
10 ms
1
100 ms
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS
Limited
1s
10 s
DC
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
Safe Operating Area, Junction-to-Ambient
4
VBFB1311
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
32
I
D
- Drain Current (A)
24
Package Limited
16
8
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
35
2.0
28
1.6
Power (W)
Power (W)
21
1.2
14
0.8
7
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
