* Pb containing terminations are not RoHS compliant, exemptions may apply.
(PCB Mount)
c
Symbol
R
thJA
R
thJC
Limit
40
1.4
Unit
°C/W
1
VBL1104N
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
SS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
=
5
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
4.5
V, I
D
=
3
A
V
GS
= 10 V, I
D
=
5
A, T
J
= 125 °C
V
GS
= 10 V, I
D
=
3
A, T
J
= 175 °C
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min.
100
1
Typ.
Max.
Unit
3
± 100
1
50
250
V
nA
µA
A
75
0.030
0.0
35
0.050
0.062
10
3100
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 15 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
410
150
35
60
pF
V
DS
= 50 V, V
GS
= 10 V, I
D
= 40 A
11
9
1.7
11
20
20
45
20
40
120
nC
Ω
V
DD
= 50 V, R
L
= 1.25
Ω
I
D
≅
40 A, V
GEN
= 10 V, R
G
= 2.5
Ω
12
30
12
ns
Source-Drain Diode Ratings and Characteristics
T
C
= 25 °C
b
A
V
ns
A
µC
I
F
= 30 A, V
GS
= 0 V
I
F
= 30 A, di/dt = 100 A/µs
1.0
60
5
0.15
1.5
100
8
0.4
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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