b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1808
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 7V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
V
GS
= 6 V
60
100
120
80
T
C
= 25
°C
60
40
40
20
V
GS
= 4 V
0
0.0
1.0
2.0
3.0
V
GS
= 3 V
4.0
5.0
20
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.8
3.6
5.4
7.2
9.0
0
V
DS
- Drain-to-Source Voltage (V)
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
Transfer Characteristics
0.0150
5000
0.0130
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
4000
C
oss
3000
C
iss
0.0110
V
GS
= 4.5 V
0.0090
V
GS
= 6.0 V
0.0070
V
GS
= 10 V
0.0050
0
20
40
60
80
100
I
D
- Drain Current (A)
2000
1000
C
rss
0
0
12
24
36
48
V
DS
- Drain-to-Source Voltage (V)
60
On-Resistance vs. Drain Current
2.0
I
D
= 10 A
V
GS
-
Gate-to-Source
Voltage (V)
8
1.7
R
DS(on)
- On-Resistance
(Normalized)
I
D
= 20 A
V
DS
= 40 V
Capacitance
10
V
GS
= 10 V
6
V
DS
= 20 V
V
DS
= 60 V
1.4
V
GS
= 6V
1.1
4
2
0.8
0
0
8
16
24
32
Q
g
- Total
Gate
Charge (nC)
40
0.5
- 50
- 25
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
3
VBM1808
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.050
10
R
DS(on)
- On-Resistance (Ω)
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25 °C
0.040
I
D
= 20 A
0.030
0.1
0.020
T
J
= 125
°C
0.010
0.01
T
J
= 25
°C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0.000
0
2
4
6
8
V
GS
-
Gate-to-Source
Voltage (V)
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.5
500
0.2
400
V
GS(th)
Variance (V)
I
D
= 5 mA
- 0.4
Power (W)
- 0.1
300
200
- 0.7
I
D
= 250 μA
100
- 1.0
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
Time (s)
1
10
Threshold Voltage
1000
I
DM
Limited
100
I
D
- Drain Current (A)
I
D
Limited
10
Single Pulse Power, Junction-to-Ambient
100 μs
1 ms
1
Limited by R
DS(on)
*
10 ms
100 ms
0.1
T
A
= 25 °C
Single
Pulse
0.01
0.01
BVDSS Limited
1
s
10
s
DC
100
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Safe Operating Area, Junction-to-Ambient
4
VBM1808
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
75
60
I
D
- Drain Current (A)
Package Limited
45
30
15
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
2.5
75
60
2.0
Power (W)
Power (W)
45
1.5
30
1.0
15
0.5
0
0
25
50
75
100
T
C
- Case Temperature (°C)
125
150
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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