Drain-Source Body Diode Ratings and Characteristics
T
C
= 25 °C
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= - 2.9 A, dI/dt = 100 A/µs
I
F
= - 2.9 A, V
GS
= 0 V
- 0.8
50
-4
98
- 8.8
- 15
- 1.5
75
-6
147
A
V
ns
A
nC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBMB2102M
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
V
GS
= 10 V thru 5 V
V
GS
= 4 V
R
DS(on)
- On-Resistance (Ω)
12
I
D
- Drain Current (A)
0.40
0.50
9
0.30
V
GS
= 4.5 V
6
V
GS
= 3 V
3
V
GS
= 10 V
0.20
0
0
1
2
3
4
0.10
0
3
6
9
12
15
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Output Characteristics
2.0
0.80
On-Resistance vs. Drain Current
R
DS(on)
- On-Resistance (Ω)
1.6
I
D
- Drain Current (A)
0.60
T
J
= 150 °C
0.40
1.2
0.8
T
C
= 25 °C
0.4
T
C
= 125 °C
T
C
= - 55 °C
0.0
0
1
2
3
4
T
J
= 25 °C
0.20
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transfer Characteristics
25
10
On-Resistance vs. Gate-to-Source Voltage
I
D
= 3.6 A
g
fs
- Transconductance (S)
20
T
C
= - 55 °C
15
T
C
= 25 °C
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 50 V
6
V
DS
= 25 V
4
V
DS
= 80 V
2
10
T
C
= 125 °C
5
0
0
3
6
9
12
15
0
0
5
10
15
20
25
I
D
- Drain Current (A)
Q
g
- Total Gate Charge (nC)
Transconductance
Gate Charge
3
VBMB2102M
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
- 1.1
I
S
- Source Current (A)
- 1.4
10
T
J
= 150 °C
V
GS(th)
(V)
I
D
= 250 μA
- 1.7
1
T
J
= 25 °C
- 2.0
0.1
0.0
0.3
0.6
0.9
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
V
SD
- Source-to-Drain Voltage (V)
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
1600
- 100
Threshold Voltage
V
DS
- Drain-to-Source Voltage (V)
- 106
I
D
= 250 μA
- 112
1200
C - Capacitance (pF)
C
iss
800
- 118
400
C
oss
0
0
C
rss
20
40
60
80
100
- 124
- 130
- 50
- 25
0
25
50
75
100
125
150
V
DS
- Drain-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Capacitance
2.1
I
D
= 3.6 A
R
DS(on)
- On-Resistance
1.7
(Normalized)
V
GS
= 4.5 V
1.3
I
D
- Drain Current (A)
V
GS
= 10 V
Drain Source Breakdown vs. Junction Temperature
10
8
6
4
0.9
2
0.5
- 50
0
- 25
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
C
- Case Temperature (°C)
On-Resistance vs. Junction Temperature
Current Derating
4
VBMB2102M
www.VBsemi.com
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
100
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
10 ms
100 ms
1 s, 10 s, DC
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
I
DAV
(A)
T
J
= 150 °C
T
J
= 25 °C
10
1
1
10
-6
10
-5
10
-4
10
-3
Time (s)
10
-2
10
-1
0.01
0.1
1
10
100
Single Pulse Avalanche Current Capability vs. Time
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