VBMB1615
www.VBsemi.com
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
()
0.010 at V
GS
= 10 V
0.012 at V
GS
= 4.5 V
I
D
(A)
a
60
50
FEATURES
• 175 °C Junction Temperature
• TrenchFET
®
Power MOSFET
•
Material categorization:
TO-220 FULLPAK
D
G
G D S
Top View
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Avalanche Energy (Duty Cycle
1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
± 20
60
50
a
200
50
a
50
125
136
3
b
, 8.3
b, c
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t
10 s.
t
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
1
VBMB1615
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
b
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Min.
60
1
Typ.
a
Max.
Unit
2
3
± 100
1
50
250
V
nA
µA
A
On-State Drain Current
60
0.010
0.012
0.016
0.020
0.013
60
2650
Drain-Source On-State Resistance
b
R
DS(on)
Forward Transconductance
b
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
470
225
47
70
pF
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
10
12
10
20
25
50
30
60
nC
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
15
35
20
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
A
V
ns
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, di/dt = 100 A/µs
1
45
1.5
100
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBMB1615
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C unless noted)
200
V
GS
= 10 thru 5 V
160
I
D
- Drain Current (A)
I
D
- Drain Current (A)
4V
80
100
120
60
80
40
T
C
= 125 °C
40
2 V, 3 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
20
25 °C
- 55 °C
0
0
1
2
3
4
5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
120
T
C
= - 55 °C
100
g
fs
- Transconductance (S)
25 °C
80
0.012
125 °C
60
R
DS(on)
-
0.008
0.016
0.020
Transfer Characteristics
V
GS
= 4.5 V
V
GS
= 10 V
40
20
0.004
0
0
10
20
30
I
D
- Drain Current (A)
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
4000
3500
3000
C - Capacitance (pF)
C
iss
2500
2000
1500
1000
C
oss
500
C
rss
0
0
10
30
40
50
20
V
DS
- Drain-to-Source Voltage (V)
60
0
0
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 30 V
I
D
= 50 A
6
4
2
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBMB1615
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
2.0
I
S
- Source Current (A)
T
J
= 150 °C
100
1.5
T
J
= 25 °C
10
1.0
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
4
VBMB1615
www.VBsemi.com
THERMAL RATINGS
60
1000
Limited by
R
DS(on)
*
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
10 µs
100 µs
40
10
1 ms
10 ms
100 ms
DC
30
1
20
10
0.1
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
175
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Drain Current vs. Ambient Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
5
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