VBM1603
www.VBsemi.com
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
60
0.0035
0.0090
210
Single
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
TO-220AB
D
G
S
G D S
Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
210
120
120
480
75
281
375
125
- 55 to + 175
mJ
W
°C
a
a
UNIT
V
A
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.4
UNIT
°C/W
1
VBM1603
www.VBsemi.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 100 A, V
GS
= 0
V
DD
= 30 V, R
L
= 0.27
I
D
110 A, V
GEN
= 10 V, R
g
= 2.5
f = 1 MHz
V
GS
= 10 V
V
DS
= 30 V, I
D
= 110 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
0.5
-
-
-
-
-
-
8600
1000
750
180
24.7
50.4
1.1
19
23
83
35
-
0.9
-
-
-
-
-
-
1.6
29
35
125
53
480
1.5
A
V
ns
nC
pF
g
fs
V
DS
= 60 V
V
DS
= 60 V, T
J
= 125 °C
V
DS
= 60 V, T
J
= 175 °C
V
DS
5
V
I
D
= 30 A
I
D
= 30 A, T
J
= 125 °C
I
D
= 30 A, T
J
= 175 °C
I
D
= 20 A
60
2.0
-
-
-
-
120
-
-
-
-
-
-
-
-
-
-
-
-
0.0035
0.0060
0.0080
0.0090
109
-
3.5
± 100
1.0
50
350
-
-
-
-
-
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 30 A
Source-Drain Diode Ratings and Characteristics
b
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1603
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
225
200
V
GS
= 10 V thru 5 V
175
I
D
- Drain Current (A)
180
150
I
D
- Drain Current (A)
150
125
100
75
50
V
GS
= 4 V
120
90
60
T
C
= 25 °C
30
T
C
= 125 °C
T
C
= - 55 °C
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
5
25
V
GS
= 3 V
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
0
Output Characteristics
Transfer Characteristics
250
0.010
g
fs
- Transconductance (S)
150
T
C
= - 55 °C
R
DS(on)
- On-Resistance (Ω)
200
0.008
0.006
V
GS
= 5 V
T
C
= 25 °C
100
T
C
= 125 °C
0.004
V
GS
= 10 V
0.002
50
0
0
16
32
48
64
80
I
D
- Drain Current (A)
0
0
20
40
60
80
I
D
- Drain Current (A)
100
120
Transconductance
12 000
10
On-Resistance vs. Drain Current
10 000
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
I
D
= 110 A
8
V
DS
= 30 V
6
8000
C
iss
6000
4
4000
2000
2
C
oss
C
rss
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
0
0
20
40
60
80
100 120 140 160 180 200
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
3
VBM1603
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.1
I
D
= 30 A
1.8
R
DS(on)
- On-Resistance
I
S
-
Source
Current (A)
100
10
T
J
= 25 °C
V
GS
= 10 V
(Normalized)
1.5
V
GS
= 4.5 V
1.2
1
T
J
= 150 °C
0.1
T
J
= - 50 °C
0.01
0.9
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T
J
- Junction Temperature (°C)
V
SD
-
Source-to-Drain
Voltage (V)
On-Resistance vs. Junction Temperature
0.05
0.8
Source Drain Diode Forward Voltage
R
DS(on)
- On-Resistance (Ω)
0.04
V
GS(th)
Variance (V)
0.4
0
0.03
- 0.4
I
D
= 5 mA
- 0.8
I
D
= 250 μA
- 1.2
0.02
T
J
= 150 °C
0.01
0
0
T
J
= 25 °C
2
4
6
8
10
- 1.6
- 50
- 25
0
25
50
75
100
125
150
175
V
GS
-
Gate-to-Source
Voltage (V)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
80
I
D
= 10 mA
V
DS
- Drain-to-Source Voltage (V)
77
Threshold Voltage
74
71
68
65
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
4
VBM1603
www.VBsemi.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100 µs
100
I
D
- Drain Current (A)
Limited by
R
DS(on)
*
I
D
Limited
1 ms
10 ms
100 ms, 1 s, 10 s, DC
10
1
0.1
T
C
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.01
* V
GS
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
0.1
0.01
0.001
0.0001
10
-4
10
-3
10
-2
10
-1
1
Square
Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
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