d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is
80
A.
1
VBQA1402
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SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
T
C
= 25 °C
50
60
0.75
40
48
24
16
1.1
60
72
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 20 V, R
L
= 2
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
0.2
V
DS
= 20 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
4750
610
275
78
38
13
11
0.7
14
9
41
9
33
22
42
13
1.4
25
18
65
18
42
35
65
25
ns
Ω
117
57
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 40 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
=6.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
100
0.0025
0.0029
102
2.0
40
43
-6
4.0
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBQA1402
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
70
V
GS
= 10
V
thru 7
V
56
I
D
- Drain Current (A)
1.5
I
D
- Drain Current (A)
42
T
C
= 25 °C
1.0
2.0
28
0.5
14
T
C
= 125 °C
T
C
= - 55 °C
2
4
0
0.0
0.5
1.0
1.5
2.0
0.0
0
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0030
6000
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (Ω)
V
GS
= 6.5
V
0.0025
V
GS
= 10
V
4500
C - Capacitance (pF)
3000
0.0020
1500
C
oss
0.0015
0
10
20
30
40
50
60
0
0
C
rss
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
- Gate-to-Source
Voltage
(V)
8
V
DS
= 20
V
6
V
DS
= 24
V
4
R
DS(on)
- On-Resistance
1.7
2.0
I
D
= 20 A
Capacitance
V
GS
= 10
V
(Normalized)
1.4
V
GS
= 6.5
V
1.1
2
0.8
0
0
15
30
45
60
75
90
0.5
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
3
VBQA1402
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
0.012
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.009
10
T
J
= 150 °C
T
J
= 25 °C
1
0.006
T
J
= 125 °C
0.003
T
J
= 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
2.1
200
On-Resistance vs. Gate-to-Source Voltage
1.7
Power (W)
160
V
GS(th)
(V)
120
1.3
I
D
= 250
µA
80
0.9
40
0.5
- 50
0
- 25
0
25
50
75
100
125
150
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
100
µs
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
10 s
DC
0.1
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
*
V
GS
> minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBQA1402
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
150
120
I
D
- Drain Current (A)
90
60
Package Limited
30
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
Power (W)
Power (W)
60
1.5
40
1.0
20
0.5
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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