VBM1606
www.VBsemi.com
N-Channel
60 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
60
R
DS(on)
()
0.0
05
at V
GS
= 10 V
0.008 at V
GS
= 7.5 V
I
D
(A)
a
120
100
FEATURES
• 175 °C Junction Temperature
• TrenchFET
®
Power MOSFET
•
Material categorization:
TO-220AB
D
G
S
N-Channel MOSFET
G D S
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Avalanche Energy (Duty Cycle
1 %)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 100 °C
Symbol
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
± 20
120
90
350
70
a
50
125
136
3
b
, 8.3
b, c
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t
10 s.
t
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
1
VBM1606
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
b
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
=5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 7.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Min.
60
2
Typ.
a
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
On-State Drain Current
60
0.0
05
0.010
0.015
0.008
60
6650
Drain-Source On-State Resistance
b
R
DS(on)
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
b
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
570
325
47
70
pF
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source
Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise
Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
Diode Forward Voltage
Reverse Recovery Time
V
DS
= 30 V, V
GS
= 10 V, I
D
= 50 A
10
12
10
20
25
50
30
nC
V
DD
= 30 V, R
L
= 0.6
I
D
50 A, V
GEN
= 10 V, R
g
= 2.5
15
35
20
350
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
A
1.5
100
V
ns
I
F
= 20 A, V
GS
= 0 V
I
F
= 20 A, di/dt = 100 A/µs
1
45
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C unless noted)
100
V
GS
= 10 thru 7 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
6V
60
80
100
60
40
40
T
C
= 125 °C
20
3V, 4V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
20
25 °C
- 55 °C
0
0
1.5
3.0
4.5
6.0
7.5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
120
T
C
= - 55 °C
100
g
fs
- Transconductance (S)
25 °C
80
0.009
125 °C
60
R
DS(on)
-
0.006
0.012
0.015
Transfer Characteristics
V
GS
= 4.5 V
V
GS
= 10 V
40
20
0.003
0
0
10
20
30
I
D
- Drain Current (A)
40
50
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
8000
7000
6000
C - Capacitance (pF)
C
iss
5000
4000
3000
2000
C
oss
1000
C
rss
0
0
10
30
40
50
20
V
DS
- Drain-to-Source Voltage (V)
60
0
0
10
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 30 V
I
D
= 50 A
6
4
2
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBM1606
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C unless noted)
2.5
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
2.0
I
S
- Source Current (A)
T
J
= 150 °C
100
1.5
T
J
= 25 °C
10
1.0
0.5
0.0
- 50
1
- 25
0
25
50
75
100
125
150
175
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
4
VBM1606
www.VBsemi.com
THERMAL RATINGS
60
1000
Limited by
R
DS(on)
*
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
100
10 µs
100 µs
40
10
1 ms
10 ms
100 ms
DC
30
1
20
10
0.1
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
T
A
- Ambient Temperature (°C)
150
175
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Maximum Drain Current vs. Ambient Temperature
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
10-
1
1
Square Wave Pulse Duration (s)
10
100
Normalized Thermal Transient Impedance, Junction-to-Case
5
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