VBM1307/VBL1307
www.VBsemi.com
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
() at V
GS
= 10 V
R
DS(on)
() at V
GS
= 4.5 V
I
D
(A)
Configuration
Package
30
0.0075
0.0095
70
Single
TO-220AB/ TO-263
FEATURES
• TrenchFET
®
power MOSFET
• Package with low thermal resistance
• 100 % R
g
and UIS tested
TO-220AB
D
TO-263
G
S
G
G D S
Top View
D S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
a
Pulsed Drain Current
b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
b
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
a
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
S
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
30
± 20
70
50
70
250
33
54
71
23
-55 to +175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
c. When mounted on 1" square PCB (FR4 material).
PCB Mount
c
SYMBOL
R
thJA
R
thJC
LIMIT
50
2.1
UNIT
°C/W
1
VBM1307/VBL1307
www.VBsemi.com
SPECIFICATIONS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 10 V
V
GS
= 10 V
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
b
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate
Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current
a
Forward Voltage
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
I
F
= 30 A, V
GS
= 0 V
V
DD
= 20 V, R
L
= 0.4
I
D
50 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
GS
= 10 V
V
DS
= 20 V, I
D
= 50 A
V
GS
= 0 V
V
DS
= 25 V, f = 1 MHz
-
-
-
-
-
-
1.3
-
-
-
-
1850
260
95
46
10
8
2.8
9
19
26
10
2200
400
200
75
-
-
4.5
15
30
40
15
ns
nC
pF
g
fs
V
DS
= 30 V
V
DS
= 30 V, T
J
= 125 °C
V
DS
= 30 V, T
J
= 175 °C
V
DS
5 V
I
D
= 20 A
I
D
= 20 A, T
J
= 125 °C
I
D
= 20 A, T
J
= 175 °C
I
D
= 15 A
30
1.0
-
-
-
-
70
-
-
-
-
-
-
-
-
-
-
0.007
0.010
0.014
0.010
100
-
-
2.5
± 100
1
50
150
-
-
-
-
-
-
S
A
μA
V
nA
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
= 15 V, I
D
= 15 A
Source-Drain Diode Ratings and Characteristics
b
-
-
-
0.87
200
1.5
A
V
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1307/VBL1307
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
250
V
GS
= 10 V thru 6 V
100
10000
200
2nd line
I
D
- Drain Current (A)
2nd line
I
D
- Drain Current (A)
V
GS
= 5 V
80
1000
1st line
2nd line
T
C
= 25 °C
T
C
= 125 °C
150
V
GS
= 4 V
60
100
40
100
50
V
GS
= 3 V
20
T
C
= -55 °C
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
2nd line
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
10000
10000
0.010
V
GS
= 4.5 V
Axis Title
200
T
C
= 25 °C
T
C
= -55 °C
1000
2nd line
g
fs
- Transconductance (S)
160
2nd line
R
DS(on)
- On-Resistance (Ω)
0.008
1st line
2nd line
1st line
2nd line
100
2
10
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
2nd line
1000
T
C
= 125 °C
1st line
2nd line
120
0.006
V
GS
= 10 V
100
0.004
80
100
40
0.002
0
0
10
20
30
40
50
I
D
- Drain Current (A)
2nd line
10
0.000
0
20
40
60
80
100
I
D
- Drain Current (A)
2nd line
10
Transconductance
On-Resistance vs. Drain Current
Axis Title
2500
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
I
D
= 50 A
V
DS
= 20 V
Axis Title
10000
2000
2nd line
C - Capacitance (pF)
C
iss
8
1000
1st line
2nd line
1500
1000
6
1000
C
rss
4
100
C
oss
500
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
Capacitance
Gate Charge
3
VBM1307/VBL1307
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.5
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 30 A
Axis Title
10000
100
T
J
= 150 °C
10000
2.1
V
GS
= 10 V
10
1000
1st line
2nd line
2nd line
I
S
- Source Current (A)
1000
T
J
= 25 °C
V
GS
= 4.5 V
1.3
100
0.9
0.1
100
0.01
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
Axis Title
0.05
10000
0.6
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.04
1000
1st line
2nd line
0.03
2nd line
V
GS(th)
Variance (V)
0.2
1000
I
D
= 5 mA
0.02
100
0.01
T
J
= 25 °C
T
J
= 150 °C
-0.6
I
D
= 250 μA
100
-1.0
0
0
2
10
6
8
10
-1.4
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Axis Title
55
2nd line
V
DS
- Drain-to-Source Voltage (V)
I
D
= 1 mA
10000
52
1000
1st line
2nd line
49
46
100
43
40
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
Drain Source Breakdown vs. Junction Temperature
4
1st line
2nd line
-0.2
1st line
2nd line
1.7
1
VBM1307/VBL1307
www.VBsemi.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
100 μs
1000
1st line
2nd line
10
I
D
limited
1
Limited by R
DS(on) (1)
1 ms
10 ms
100 ms, 1 s, 10 s, DC
100
0.1
T
C
= 25 °C
Single pulse
BVDSS limited
0.01
0.01
(1)
0.1
1
10
100
10
1000
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
Axis Title
10000
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
t
1
t
2
1000
1st line
2nd line
t
1
t
2
0.1
0.05
0.02
Single pulse
100
0.01
0.0001
0.001
0.01
0.1
1
10
100
10
1000
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
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