VBM1208N
www.VBsemi.com
N-Channel 200 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
()
0.060 at V
GS
= 10 V
0.070 at V
GS
= 6 V
I
D
(A)
40
38.7
Q
g
(Typ)
95
•
•
•
•
TrenchFET
®
Power MOSFETS
175 °C Junction Temperature
New Low Thermal Resistance Package
Compliant to RoHS Directive 2002/95/EC
RoHS
COMPLIANT
APPLICATIONS
TO-220AB
• Industrial
D
G
G D S
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche
Maximum Power
Energy
a
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
200
± 20
40
23
70
35
61
300
b
3.75
- 55 to 175
mJ
W
°C
A
Unit
V
Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
c
Symbol
R
thJA
R
thJC
Limit
40
0.5
Unit
°C/W
1
VBM1208N
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 30 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 15 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 45 A, di/dt = 100 A/µs
I
F
= 45 A, V
GS
= 0 V
1
150
12
0.9
V
DD
= 100 V, R
L
= 2.78
I
D
45 A, V
GEN
= 10 V, R
g
= 2.5
f = 1 MHz
V
DS
= 100 V, V
GS
= 10 V, I
D
= 45 A
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3000
200
110
95
28
34
1.6
22
220
40
145
35
330
60
220
45
70
1.5
225
18
2
ns
140
nC
pF
a
Symbol
Test Conditions
Min .
200
2
Typ.
Max.
Unit
4
± 250
1
50
250
V
nA
µA
A
70
0.060
0.130
0.170
0.070
70
g
fs
V
DS
= 15 V, I
D
= 20 A
S
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1208N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 thru 7 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
5V
80
100
60
60
40
40
T
C
= 125 °C
20
25 °C
- 55 °C
0
20
4V
3V
0
0
2
4
6
8
10
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
150
T
C
= - 55 °C
g
fs
- Transconductance (S)
25 °C
R
DS(on)
- On-Resistance ()
120
0.08
0.10
Transfer Characteristics
V
GS
= 6 V
0.06
V
GS
= 10 V
0.04
90
125 °C
60
30
0.02
0
0
10
20
30
40
50
60
0.00
0
20
40
60
80
100
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
3500
3000
C
iss
C - Capacitance (pF)
2500
2000
1500
1000
500
0
0
40
80
120
160
200
V
DS
- Drain-to-Source Voltage (V)
C
rss
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 100V
I
D
= 45 A
12
8
4
C
oss
0
0
30
60
90
120
150
180
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBM1208N
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.8
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 20 A
I
S
- Source Current (A)
100
2.4
2.0
T
J
= 150 °C
10
T
J
= 25 °C
1.6
1.2
0.8
0.4
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
100
300
290
Source-Drain Diode Forward Voltage
I
D
= 1.0 mA
280
10
I
Dav
(A)
V
DS
(V)
I
AV
(A) at T
A
= 25 °C
270
260
250
240
I
AV
(A) at T
A
= 150 °C
0.1
0.00001
0.0001
0.001
0.01
t
in
(s)
0.1
1
230
- 50
- 25
0
25
50
75
100
125
150
175
1
T
J
- Junction Temperature (°C)
Avalanche Current vs. Time
Drain Source Breakdown vs. Junction Temperature
4
VBM1208N
www.VBsemi.com
THERMAL RATINGS
50
100
10 µs
*Limited
by r
DS(on)
40
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
100 µs
1 ms
1
10 ms, 100 ms, dc
30
20
0.1
10
0.01
T
C
= 25 °C
Single Pulse
0
0
25
50
75
100
125
150
175
0.001
0.1
100
1
10
1000
V
DS
- Drain-to-Source Voltage (V)
*V
GS
>
minimum V
GS
at which r
DS(on)
is specified
T
C
- Ambient Temperature (°C)
Maximum Avalanche and Drain Current
vs. Case Temperature
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Safe Operating Area, Case Temperature
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
Square Wave Pulse Duration (sec)
10-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
5
测试/测量
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