VBL1806
www.VBsemi.com
N-Channel 80 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
80
R
DS(on)
() MAX.
0.0065 at V
GS
= 10 V
0.0010 at V
GS
= 7.5 V
I
D
(A)
120
110
Q
g
(TYP.)
53.5 nC
FEATURES
• ThunderFET
®
power MOSFET
• Maximum 175 °C junction temperature
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
D
TO-263
G
S
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 125 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
80
± 20
120
65
225
50
125
370
b
120
b
-55 to +175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.75
UNIT
°C/W
1
VBL1806
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 80 V, V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
V
DS
= 80 V, V
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 40 V, R
L
= 1.67
I
D
30 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 40 V, V
GS
= 10 V, I
D
= 30 A
V
GS
= 0 V, V
DS
= 40 V, f = 1 MHz
-
-
-
-
-
-
0.9
-
-
-
-
3330
1395
95
53.5
14.5
13.2
1.9
13
22
27
9
-
-
-
81
-
-
3.8
26
44
54
18
ns
nC
pF
I
D(on)
R
DS(on)
g
fs
GS
=
GS
=
GS
=
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
80
2.5
-
-
-
-
90
-
-
-
-
-
-
-
-
-
-
0.0065
0.0100
85
-
4.5
± 100
1
100
2
-
-
-
-
V
nA
μA
mA
A
S
0V
0 V, T
J
= 125 °C
0 V, T
J
= 175 °C
V
DS
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 7.5 V, I
D
= 30 A
V
DS
= 15 V, I
D
= 30 A
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs)
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= 30 A, di/dt = 100 A/μs
I
F
= 30 A, V
GS
= 0 V
-
-
-
-
-
-
0.86
88
5
0.22
240
1.4
176
10
0.44
A
V
ns
A
μC
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBL1806
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
250
V
GS
= 10 V thru 8 V
Axis Title
10000
200
10000
200
2nd line
I
D
- Drain Current (A)
V
GS
= 7 V
160
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 25 °C
150
120
100
100
50
V
GS
= 5 V
80
100
40
T
C
= 125 °C
T
C
= -55 °C
0
0
1
2
3
V
GS
= 4 V
10
5
0
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
4
V
DS
- Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
100
T
C
= -55 °C
Axis Title
10000
0.009
10000
2nd line
g
fs
- Transconductance (S)
80
T
C
= 25 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.008
V
GS
= 7.5 V
1000
1st line
2nd line
1000
1st line
2nd line
100
10
80
100
10000
1000
1st line
2nd line
100
10
44
55
60
T
C
= 125 °C
0.007
V
GS
= 10 V
40
100
20
0.006
0
0
5.0
10.0
15.0
20.0
25.0
I
D
- Drain Current (A)
2nd line
10
30.0
0.005
0
20
40
60
I
D
- Drain Current (A)
2nd line
Transconductance
On-Resistance vs. Drain Current
Axis Title
6000
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
10
I
D
= 30 A
Axis Title
4800
2nd line
C - Capacitance (pF)
C
iss
8
1000
1st line
2nd line
3600
C
oss
6
2400
4
100
1200
C
rss
V
DS
= 20 V, 40 V, and 64V
2
0
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
11
22
33
Q
g
- Total Gate Charge (nC)
2nd line
Capacitance
Gate Charge
3
VBL1806
www.VBsemi.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
2.0
2nd line
R
DS(on)
- On-Resistance (Normalized)
I
D
= 30 A
Axis Title
10000
1.0
10000
1.7
V
GS
= 10 V
0.4
1000
1st line
2nd line
2nd line
V
GS(th)
- Variance (V)
1000
I
D
= 5 mA
V
GS
= 7.5 V
1.1
100
0.8
-0.8
I
D
= 250 μA
100
-1.4
0.5
-50 -25
0
25
50
75 100 125 150 175
T
J
- Junction Temperature (°C)
2nd line
10
-2.0
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
10
On-Resistance vs. Junction Temperature
Threshold Voltage
Axis Title
0.05
10000
2nd line
V
DS
- Drain-to-Source Voltage (V)
125
I
D
= 250 μA
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Ω)
0.04
1000
1st line
2nd line
0.03
120
1000
115
100
110
1st line
2nd line
10
-50 -25
0
25
50
75 100 125 150 175
T
J
- Temperature (°C)
2nd line
Axis Title
10000
1000
1st line
2nd line
100
30
10
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
2nd line
90
0.02
T
J
= 125 °C
100
0.01
T
J
= 25 °C
0
2
4
6
8
10
10
105
V
GS
- Gate-to-Source Voltage (V)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Drain Source Breakdown vs. Junction Temperature
Axis Title
100
10000
150
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
120
1000
1st line
2nd line
2nd line
I
D
- Drain Current (A)
1
T
J
= 25 °C
0.1
100
0.01
60
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
Source Drain Diode Forward Voltage
Current De-Rating
4
1st line
2nd line
1.4
-0.2
VBL1806
www.VBsemi.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
Axis Title
1000
I
DM
limited
Axis Title
10000
100
10000
2nd line
I
D
- Drain Current (A)
100
I
D
limited
Limited by R
DS(on) (1)
100 μs
1000
1st line
2nd line
2nd line
I
DAV
(A)
1 ms
10 ms
25 °C
150 °C
1000
1st line
2nd line
100
10
0.01
10000
1000
1st line
2nd line
100
(t)
10
100
1
T
C
= 25 °C
Single pulse
100 ms, 1 s, 10 s, DC
BVDSS limited
0.1
0.1
(1)
1
10
100
10
1000
10
0.00001
0.0001
Time (s)
2nd line
0.001
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area
I
DAV
vs. Time
Axis Title
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
t
1
t
2
t
1. Duty cycle, D = t
1
2
2. Per unit base = R
thJA
= 40 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
4. Surface mounted
0.1
0.05
0.02
Single pulse
0.01
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
10
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
5
测试/测量
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