VBJ1101M
www.VBsemi.com
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
100
R
DS(on)
(Ω)
0.100 at V
GS
= 10 V
0.120 at V
GS
= 4.5 V
I
D
(A)
5.0
4.5
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
D
SOT-223
D
S
S
N-Channel MOSFET
G
G
D
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
a
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
3.3
2.3
10 s
Steady State
100
± 20
4.5
3.0
25
15
11
1.7
1.2
- 55 to 175
Unit
V
5.0
3.5
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
36
75
17
Maximum
45
90
20
Unit
°C/W
1
VBJ1101M
www.VBsemi.com
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Symbol
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V V
GS
= 0 V, T
J
= 55 °C
,
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 6.0 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 4.0 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 4.0 A, T
J
= 175 °C
V
GS
= 4.5 V, I
D
= 3.1 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 1.7 A, dI/dt = 100 A/µs
V
DD
= 50 V, R
L
= 30
Ω
I
D
≅
1 A, V
GEN
= 10 V, R
g
= 6
Ω
V
GS
= 0.1 V, f = 5 MHz
0.5
V
DS
= 50 V, V
GS
= 10 V, I
D
= 4.0 A
18
3.4
5.3
1.4
10
10
25
12
50
2.4
20
20
50
24
80
ns
Ω
27
nC
g
fs
V
SD
V
DS
= 15 V, I
D
= 4.0 A
I
S
= 1.7 A, V
GS
= 0 V
40
0.110
0.122
0.140
0.120
25
0.8
1.2
S
V
Ω
Min.
100
1.5
Typ.
Max.
Unit
3
± 100
1
20
V
nA
µA
A
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
40
V
GS
= 10 V thru 5 V
32
I
D
- Drain Current (A)
40
32
I
D
-
Drain Current (A)
24
4V
16
24
16
T
C
= 150 °C
8
25 °C
8
2V
0
0.0
- 55 °C
0
2.5
3.0
0
1
2
3
4
5
0.5
1.0
1.5
2.0
V
DS
-
Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2
VBJ1101M
www.VBsemi.com
TYPICAL CHARACTERISTICS
0.30
25 °C, unless otherwise noted
2100
1800
C
iss
C - Capacitance (pF)
1500
1200
900
600
C
oss
300
0
C
rss
0
15
30
45
60
75
90
0.25
R
DS(on)
-
On-Resistance (Ω)
0.20
V
GS
= 4.5 V
0.15
V
GS
= 10 V
0.10
0.05
0.00
0
8
16
24
32
40
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
10
I
D
= 6.0 V
2.2
I
D
= 6.0 A
2.0
8
R
DS(on)
-
On-Resistance
(Normalized)
V
DS
= 30 V
6
1.8
1.6
1.4
1.2
1.0
0.8
0
0
4
8
12
16
20
0.6
- 50
Capacitance
V
GS
- Gate-to-Source Voltage (V)
V
GS
= 10 V
4
2
- 25
0
25
50
75
100
125
150
175
Q
g
-
Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
50
0.06
On-Resistance vs. Junction Temperature
0.05
R
DS(on)
-
On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 175 °C
10
T
J
= 25 °C
0.04
I
D
= 6.0 A
0.03
0.02
0.01
1
0.00
0.00
0.5
1.0
1.5
2.0
2.5
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3
VBJ1101M
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.8
50
0.4
V
GS(th)
Variance (V)
40
I
D
= 250 µA
- 0.4
Power (W)
0.0
30
20
- 0.8
10
- 1.2
- 50
0
- 25
0
25
50
75
100
125
150
175
0.01
0.1
1
Time (s)
10
100
1000
T
J
- Temperature (°C)
Threshold Voltage
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 75 °C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
4
VBJ1101M
www.VBsemi.com
SOT-223 (HIGH VOLTAGE)
D
B
3
B1
C
A
0.08 (0.003)
A
4
3
E
1
2
3
0.10 (0.004)
M
C B
M
H
0.20 (0.008)
M
C A
M
L1
4xL
e
e1
4xC
3xB
0.10 (0.004)
M
C B
M
θ
MILLIMETERS
DIM.
A
B
B1
C
D
E
e
e1
H
L
L1
θ
ECN: S-82109-Rev. A, 15-Sep-08
DWG: 5969
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension do not include mold flash.
4. Outline conforms to JEDEC outline TO-261AA.
-
6.71
0.91
0.061 BSC
10'
-
MIN.
1.55
0.65
2.95
0.25
6.30
3.30
2.30 BSC
4.60 BSC
7.29
-
0.264
0.036
MAX.
1.80
0.85
3.15
0.35
6.70
3.70
MIN.
0.061
0.026
0.116
0.010
0.248
0.130
INCHES
MAX.
0.071
0.033
0.124
0.014
0.264
0.146
0.0905 BSC
0.181 BSC
0.287
-
0.0024 BSC
10'
5
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