VBMB165R18
www.VBsemi.com
N-Channel
650
V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. () at 25 °C
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
106
14
33
Single
650
0.50
FEATURES
•
•
•
•
•
•
Reduced t
rr
, Q
rr
, and I
RRM
Low figure-of-merit (FOM) R
on
x Q
g
Low input capacitance (C
iss
)
Low switching losses due to reduced Q
rr
Ultra low gate charge (Q
g
)
Avalanche energy rated (UIS)
D
TO-220 FULLPAK
G
S
G D S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche
Energy
b
E
AS
P
D
T
J
, T
stg
T
J
= 125 °C
dV/dt
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
d
for 10 s
Soldering Recommendations (Peak Temperature)
c
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 28.2 mH, R
g
= 25
,
I
AS
= 5.1 A.
c. 1.6 mm from case.
d. I
SD
I
D
, dI/dt = 100 A/μs, starting T
J
= 25 °C.
1
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
650
± 30
1
8
16
53
1.7
367
68
-55 to +150
37
31
300
W/°C
mJ
W
°C
V/ns
°C
A
UNIT
V
VBMB165R18
www.VBsemi.com
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
62
0.5
UNIT
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related
a
Effective Output Capacitance, Time
Related
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
o(er)
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
GS
= ± 30 V
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 11 A
V
DS
= 30 V, I
D
= 11 A
MIN.
650
-
2.5
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.67
-
-
-
-
-
0.36
7.0
3322
205
120
84
293
71
14
33
22
34
68
42
0.78
MAX.
-
-
4.5
± 100
±1
1
500
-
-
-
-
UNIT
V
V/°C
V
nA
μA
μA
S
V
GS
= 0 V,
V
DS
= 100 V,
f = 1 MHz
pF
-
-
-
-
-
44
68
102
84
-
ns
nC
V
DS
= 0 V to 520 V, V
GS
= 0 V
C
o(tr)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
f = 1 MHz, open drain
V
DD
= 520 V, I
D
= 11 A,
V
GS
= 10 V, R
g
= 9.1
V
GS
= 10 V
I
D
= 11 A, V
DS
= 520 V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
160
1.2
14
21
A
53
1.2
-
-
-
V
ns
μC
A
G
S
T
J
= 25 °C, I
S
= 11 A, V
GS
= 0 V
T
J
= 25 °C, I
F
= I
S
= 11 A,
dI/dt = 100 A/μs, V
R
= 25 V
Notes
a. C
oss(er)
is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
b. C
oss(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DSS
.
2
VBMB165R18
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
60
I
D
, Drain-to-Source Current (A)
R
DS(on)
, Drain-to-Source
On Resistance (Normalized)
50
40
30
20
10
0
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
T
J
= 25 °C
3
I
D
= 11 A
2.5
2
1.5
1
0.5
0
- 60 - 40 - 20 0
V
GS
= 10 V
0
5
10
15
20
25
30
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
T
J
, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
40
I
D
, Drain-to-Source Current (A)
Capacitance (pF)
30
TOP 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
4000
T
J
= 150 °C
3000
C
iss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
2000
C
oss
10
1000
C
rss
0
0
5
10
15
20
25
30
0
0
100
200
300
400
500
600
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
14
60
I
D
, Drain-to-Source Current (A)
5000
12
10
50
40
C
oss
(pF)
30
T
J
= 150 °C
20
C
oss
500
E
oss
8
6
4
10
0
0
5
T
J
= 25 °C
V
DS
= 29.6 V
10
15
20
25
50
0
100
200
300
V
DS
400
500
600
2
0
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
Fig. 6 - C
oss
and E
oss
vs. V
DS
E
oss
(μJ)
VBMB165R18
www.VBsemi.com
24
V
GS
,
Gate-to-Source
Voltage (V)
20
16
12
8
4
0
0
30
60
V
DS
= 520 V
V
DS
= 325 V
V
DS
= 130 V
25
I
D
, Drain Current (A)
90
120
150
20
15
10
5
0
25
50
75
100
125
150
Q
g
, Total
Gate
Charge (nC)
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
T
J
, Case Temperature (°C)
Fig. 10 - Maximum Drain Current vs. Case Temperature
100
850
I
D
= 10 mA
825
T
J
= 150 °C
I
SD
, Reverse Drain Current (A)
V
DS
, Drain-to-Source
Breakdown Voltage (V)
800
775
750
725
700
675
10
T
J
= 25 °C
1
V
GS
= 0 V
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
650
- 60 - 40 - 20 0
20 40 60 80 100 120 140 160
V
SD
,
Source-Drain
Voltage (V)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
100
I
DM
Limited
T
J
, Junction Temperature (°C)
Fig. 11 - Temperature vs. Drain-to-Source Voltage
10
I
D
, Drain Current (A)
Limited by R
DS(on)
*
1
100 μs
Operation in this Area
Limited by R
DS(on)
1 ms
0.1
T
C
= 25 °C
T
J
= 150 °C
Single
Pulse
0.01
1
10 ms
BVDSS Limited
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
Fig. 9 - Maximum Safe Operating Area
4
VBMB165R18
www.VBsemi.com
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single
Pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
R
D
V
DS
V
GS
R
G
V
DS
t
p
V
DD
+
-
V
DD
D.U.T.
V
DS
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
I
AS
Fig. 16 - Unclamped Inductive Waveforms
Fig. 13 - Switching Time Test Circuit
V
DS
90 %
10 V
Q
GS
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GD
V
G
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
L
Vary t
p
to obtain
required I
AS
R
G
V
DS
D.U.T
I
AS
12 V
0.2 µF
0.3 µF
+
-
V
DD
D.U.T.
+
-
V
DS
10 V
t
p
0.01
Ω
V
GS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
I
G
I
D
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
5
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