d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
1
VBM1302
www.VBsemi.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V V
GS
= 0 V
V
DS
= 24 V V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
=
38.8
A
V
GS
= 4.5 V, I
D
=
37
A
V
DS
= 15 V, I
D
=
38.8
A
Min.
30
Typ.
Max.
Unit
V
35
- 7.5
1.0
3.0
± 100
1
10
90
0.0021
0.0029
160
6201
mV/°C
V
nA
µA
A
S
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
=
38.8
A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
=
28.8
A
f = 1 MHz
V
DD
= 15 V, R
L
= 0.625
I
D
24 A, V
GEN
= 10 V, R
g
= 1
1725
970
171
81.5
34
29
1.4
18
11
70
10
55
2.1
27
17
105
15
83
270
83
18
257
123
pF
nC
ns
V
DD
= 15 V, R
L
= 0.67
I
D
22.5 A, V
GEN
= 4.5 V, R
g
= 1
180
55
12
T
C
= 25 °C
I
S
= 22 A
140
3
7
0
0.8
52
70.2
27
25
1.2
78
105
A
V
ns
nC
ns
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBM1302
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
90
V
GS
= 10 V thru 4 V
75
2.4
I
D
- Drain Current (A)
3.0
I
D
- Drain Current (A)
60
1.8
45
1.2
T
C
= 25 °C
0.6
T
C
= 125 °C
T
C
= - 55 °C
0
1
2
3
4
30
15
V
GS
= 2 V
0
0.0
V
GS
= 3 V
0.0
0.5
1.0
1.5
2.0
V
DS
- Drain-to-Source Voltage (V)
2.5
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
600
T
C
= 25 °C
500
G
fs
- Transconductance (S)
T
C
= 125 °C
R
DS(on)
– On-Resistance (Ω)
0.0050
0.0060
Transfer Characteristics
400
0.0040
V
GS
= 4.5 V
0.0030
300
T
C
= - 55 °C
V
GS
= 10 V
0.0020
200
100
0.0010
0
0
10
20
30
40
50
60
70
80
90
I
D
- Drain Current (A)
0.000
0
15
30
45
60
I
D
- Drain Current (A)
75
90
Transconductance
8000
R
DS(on)
vs. Drain Current
10
6000
V
GS
- Gate-to-Source Voltage (V)
C
iss
I
D
=
38.8
A
V
DS
= 15 V
8
V
DS
= 24 V
6
C - Capacitance (pF)
4000
2000
4
1000
C
oss
C
rss
2
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
0
0
30
90
60
120
150
Q
g
- Total Gate Charge (nC)
180
Capacitance
Gate Charge
3
VBM1302
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.2
100
V
GS
= 10 V, I
D
=
38.8
A
V
GS
= 4.5 V, I
D
= 27 A
R
DS(on)
- On-Resistance (Normalized)
1.0
10
I
S
- Source Current (A)
0.8
1
T
J
= 150 °C
0.1
T
J
= 25 °C
0.6
0.4
0.01
0.2
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
0.005
I
D
=
38.8
A
Forward Diode Voltage vs. Temperature
2.8
R
DS(on
) -On-Resistance (Ω)
0.004
T
A
= 125 °C
V
GS(th)
Variance (V)
2.4
I
D
= 250 µA
2.0
0.003
T
A
= 25 °C
0.002
1.6
0.001
1.2
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
0.8
- 50 - 25
0
25
50
75
100
125 150
175
T
J
- Temperature (°C)
R
DS(on)
vs. V
GS
vs. Temperature
1000
100
I
D
- Drain Current (A)
*Limited by r
DS (on)
Threshold Voltage
10
1
10 ms
100 ms
1s
10 s
dc
0.1
0.01
T
A
= 25 °C
Single Pulse
0.001
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBM1302
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
150
300
125
I
D
- Drain Current (A)
Power Dissipation (W)
250
100
200
75
150
50
100
25
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
*The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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