VBM1202M
www.VBsemi.com
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
70
13
39
Single
200
0.20
FEATURES
•
•
•
•
•
•
•
Surface mount
Low-profile through-hole
Available in tape and reel
Dynamic dV/dt rating
150 °C operating temperature
Fast switching
Fully avalanche rated
Available
TO-220AB
D
G
DRAIN connected to TAB
S
G D S
Top
View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a, e
Linear Derating Factor
Single Pulse Avalanche Energy
b, e
Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c, e
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
T
C
= 25 °C
T
A
= 25 °C
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
200
± 20
14
10
56
1.0
580
15
13
110
3.1
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.7 mH, R
g
= 25
,
I
AS
= 18 A (see fig. 12).
c. I
SD
18 A, dI/dt
150 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF640, SiHF640 data and test conditions.
1
VBM1202M
www.VBsemi.com
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB mounted, steady-state)
a
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
40
1.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
g
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
c
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 200 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 11 A
b
V
DS
= 50 V, I
D
= 11 A
d
MIN.
200
-
1.0
-
-
-
-
6.7
-
-
-
-
-
-
-
TYP.
-
0.29
-
-
-
-
0.20
-
1300
430
130
-
-
-
14
51
45
36
-
MAX.
-
-
3.0
± 100
25
250
0.25
-
-
-
-
70
13
39
-
-
-
-
3.6
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
d
I
D
= 18 A, V
DS
= 160 V,
see fig. 6 and 13
b, c
pF
V
GS
= 10 V
nC
V
DD
= 100 V, I
D
= 18 A,
R
g
= 9.1
,
R
D
= 5.4
,
see fig. 10
b, c
f = 1 MHz, open drain
-
-
-
0.5
ns
-
-
-
-
-
-
-
-
300
3.4
18
A
72
2.0
610
7.1
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 18 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 18 A, dI/dt = 100 A/μs
b, c
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
c. Uses IRF640/SiHF640 data and test conditions.
2
VBM1202M
www.VBsemi.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
I
D
, Drain Current (A)
10
1
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
I
D
= 14 A
V
GS
= 10 V
10
0
4.5 V
20 µs Pulse Width
T
C
=
25 °C
10
-1
91037_01
10
0
10
1
20 40 60 80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
91037_04
T
J,
Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics, T
J
= 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
I
D
, Drain Current (A)
10
1
Capacitance (pF)
V
GS
Top
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
3000
2500
2000
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
iss
4.5 V
1500
1000
500
C
oss
C
rss
10
0
20 µs Pulse Width
T
C
=
150 °C
10
-1
10
0
10
1
0
10
0
91037_05
10
1
91037_02
V
DS,
Drain-to-Source Voltage (V)
V
DS,
Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T
J
= 175 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
V
GS
, Gate-to-Source Voltage (V)
I
D
= 14A
V
DS
= 160 V
V
DS
= 100 V
V
DS
= 40 V
I
D
, Drain Current (A)
10
1
150
°
C
16
25
°
C
10
0
12
8
4
For test circuit
see figure 13
10
-1
4
91037_03
20 µs Pulse Width
V
DS
=
50 V
5
6
7
8
9
10
0
0
91037_06
15
30
45
60
75
V
GS,
Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3
VBM1202M
www.VBsemi.com
20
I
SD
, Reverse Drain Current (A)
150
°
C
25
°
C
10
1
I
D
, Drain Current (A)
16
12
8
10
0
V
GS
= 0 V
0.50
0.70
0.90
1.10
1.30
1.50
91037_09
4
0
25
50
75
100
125
150
91037_07
V
SD
, Source-to-Drain Voltage (V)
T
C
, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
R
D
10
3
5
2
Operation in this area limited
by R
DS(on)
10
µs
100
µs
1
ms
10
ms
R
g
V
DS
V
GS
D.U.T.
+
- V
DD
I
D
, Drain Current (A)
10
2
5
2
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10
5
2
1
5
2
Fig. 10a - Switching Time Test Circuit
T
C
= 25
°C
T
J
= 150
°C
Single Pulse
0.1
2
5
V
DS
5
0.1
1
2
5
10
2
10
2
2
5
10
3
90 %
91037_08
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
0
−
0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
Single Pulse
(Thermal Response)
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
10
-4
10
-3
10
-2
0.1
1
10
10
-2
10
-3
10
-5
91037_11
t
1
, Rectangular Pulse Duration (s)
Fig. 10 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
VBM1202M
www.VBsemi.com
15 V
10 V
L
Driver
Q
GS
Q
G
V
DS
Q
GD
R
g
20 V
t
p
D.U.T.
I
AS
0.01
Ω
V
G
+
A
- V
DD
Charge
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
50 kΩ
12 V
0.2 µF
0.3 µF
V
DS
t
p
+
D.U.T.
V
GS
-
V
DS
I
AS
3 mA
Fig. 12b - Unclamped Inductive Waveforms
I
G
I
D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
1400
E
AS
, Single Pulse Energy (mJ)
1200
1000
800
600
400
200
0
V
DD
= 50 V
25
50
75
100
I
D
8.0 A
11.0 A
Bottom 18.0 A
Top
125
150
91037_12c
Starting T
J
, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
5
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