VBE165R04
www.VBsemi.com
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
48
12
19
Single
650
1.8
FEATURES
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Compliant to RoHS directive 2002/95/EC
D
TO-252
G
G
D
S
S
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
e
T
C
= 25 °C
V
GS
at 10 V
T
C
= 100 °C
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
T
C
= 25 °C
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d
for 10 s
Mounting Torque
6-32 or M3 screw
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
650
± 30
4.5
4.2
18
0.48
325
4
6
60
2.8
- 55 to + 150
300
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 24 mH, R
G
= 25
Ω,
I
AS
=
3.2
A (see fig. 12).
c. I
SD
≤
3.2
A, dI/dt
≤
90 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. Drain current limited by maximum junction temperature.
1
VBE165R04
www.VBsemi.com
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thJC
TYP.
-
-
MAX.
65
2.1
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
d
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 650 V, V
GS
= 0 V
V
DS
= 520 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 3.1 A
b
V
DS
= 50 V, I
D
= 3.1 A
650
-
2.5
-
-
-
-
3.9
-
670
-
-
-
-
-
-
-
-
5.0
± 100
25
250
2.1
-
V
mV/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V
V
DS
= 520 V, f = 1.0 MHz
V
DS
= 0 V to 520 V
c
I
D
=
3.2
A, V
DS
= 400 V
see fig. 6 and 13
b
-
-
-
-
-
-
-
1417
177
7.0
1912
48
84
-
-
-
14
20
34
18
-
-
-
-
-
-
48
12
19
-
-
-
-
ns
nC
pF
V
GS
= 10 V
-
-
-
V
DD
= 325 V, I
D
= 3.2 A
R
G
= 9.1
Ω,
R
D
= 62
Ω,
see fig. 10
b
-
-
-
-
-
-
-
-
-
-
-
493
2.1
4
A
21
1.5
739
3.2
V
ns
µC
G
S
T
J
= 25 °C, I
S
=
3.2
A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
=
3.2
A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80 % V
DS
.
d. t = 60 s, f = 60 Hz.
2
VBE165R04
www.VBsemi.com
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
10
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
5
5
T
J
= 150
°
C
T
J
= 25
°
C
1
1
0.1
0.1
20µs PULSE WIDTH
4.5V
T
J
= 25
°
C
1
10
100
0.1
4.0
V DS = 100V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
10
TOP
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
5
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
8.0
I
D
=
3.2A
5.5
5.0
3.5
4.5V
1
2.0
0.5
0.1
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
3
VBE165R04
www.VBsemi.com
2000
1600
C, Capacitance (pF)
iss
1200
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
5
oss
800
T
J
= 150
°
C
1
400
T
J
= 25
°
C
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
rss
0
1
10
100
1000
A
0.1
0.2
V
DS
, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
=
3.2
A
V
DS
= 520V
V
DS
= 325V
V
DS
= 130V
10
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
16
I
D
, Drain Current (A)
5
12
100us
8
1ms
1
10ms
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
10000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
4
VBE165R04
www.VBsemi.com
V
DS
R
D
6.0
V
GS
D.U.T.
+
5.0
R
G
-
VDD
I
D
, Drain Current (A)
4.0
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
V
DS
90 %
1.0
0.0
25
50
75
100
125
150
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
T
C
, Case Temperature ( ° C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
t
2
0.1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15 V
t
p
V
DS
L
Driver
R
G
20 V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
- V
DD
A
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
5
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
